Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 정재경 | - |
dc.date.accessioned | 2019-03-22T06:36:00Z | - |
dc.date.available | 2019-03-22T06:36:00Z | - |
dc.date.issued | 2016-11 | - |
dc.identifier.citation | JOURNAL OF MATERIALS CHEMISTRY C, v. 4, NO 44, Page. 10486-10493 | en_US |
dc.identifier.issn | 2050-7526 | - |
dc.identifier.issn | 2050-7534 | - |
dc.identifier.uri | https://pubs.rsc.org/en/Content/ArticleLanding/2016/TC/C6TC03725A#!divAbstract | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/101093 | - |
dc.description.abstract | A facile route for the preparation of a solution-processed silicon oxide dielectric from perhydropolysilazane (PHPS) at a low temperature (˂= 150 degrees C) is proposed. Deep ultraviolet (DUV) irradiation on the PHPS-derived silicon oxide film, where the coupling agent of vinyltriethoxysilane (VTES) was introduced to assist the formation of the Si-O lattice network at a low temperature, allowed the prepared silicon oxide film to have device-quality insulating properties. The metal/insulator/metal capacitor with DUV-annealed silicon oxide exhibited a low gate leakage current density of 7.0 x 10 (8) A cm (2) at 1 MV cm (1), which was attributed to the photon-assisted purification and densification of the silicon oxide film. The suitability of this silicon oxide film as a gate insulator was evaluated in all-solution-processed indium zinc oxide (IZO) thin-film transistors (TFTs). The IZO TFTs that were fabricated at a contact annealing temperature of 150 degrees C exhibited a high field-effect mobility of 17.3 cm(2) V (-1) s (-1), a threshold voltage of 2.7 V, and an I-ON/OFF modulation ratio of 1 x 10(5). Therefore, DUV-assisted IZO TFTs with a PHPS-derived silicon oxide insulator are promising candidates for low-temperature, large-area, and flexible electronics for use on inexpensive plastic substrates. | en_US |
dc.description.sponsorship | This study was supported by the Industrial Strategic Technology Development program funded by MKE/KEIT under grant 10051403 and the Research Fund of Hanyang University (HY-2015). | en_US |
dc.language.iso | en | en_US |
dc.publisher | ROYAL SOC CHEMISTRY | en_US |
dc.subject | THIN-FILM TRANSISTORS | en_US |
dc.subject | ROOM-TEMPERATURE | en_US |
dc.subject | PHOTOCHEMICAL ACTIVATION | en_US |
dc.subject | GEL FILMS | en_US |
dc.subject | ZNO | en_US |
dc.subject | INSULATOR | en_US |
dc.subject | SPECTROSCOPY | en_US |
dc.subject | ELECTRONICS | en_US |
dc.subject | FABRICATION | en_US |
dc.subject | PERHYDROPOLYSILAZANE | en_US |
dc.title | A solution-processed silicon oxide gate dielectric prepared at a low temperature via ultraviolet irradiation for metal oxide transistors | en_US |
dc.type | Article | en_US |
dc.relation.no | 44 | - |
dc.relation.volume | 4 | - |
dc.identifier.doi | 10.1039/c6tc03725a | - |
dc.relation.page | 10486-10493 | - |
dc.relation.journal | JOURNAL OF MATERIALS CHEMISTRY C | - |
dc.contributor.googleauthor | Seul, Hyeon Joo | - |
dc.contributor.googleauthor | Kim, Hyun-Gwan | - |
dc.contributor.googleauthor | Park, Man-Young | - |
dc.contributor.googleauthor | Jeong, Jae Kyeong | - |
dc.relation.code | 2016001750 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DEPARTMENT OF ELECTRONIC ENGINEERING | - |
dc.identifier.pid | jkjeong1 | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.