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Reduction of hole doping of chemical vapor deposition grown graphene by photoresist selection and thermal treatment

Title
Reduction of hole doping of chemical vapor deposition grown graphene by photoresist selection and thermal treatment
Author
이승백
Keywords
graphene; transistor; photolithography; polycarbonate; thermal treatment
Issue Date
2016-11
Publisher
IOP PUBLISHING LTD
Citation
NANOTECHNOLOGY, v. 27, NO 50, No.505205
Abstract
The doping effect on graphene by photoresists were studied in this article. Polymethyl methacrylate (PMMA) is the usual choice for graphene transfer, but it is known to leave a significant amount of residue. PMMA results in strong hole doping and reduction of mobility of the graphene devices. Not only PMMA, but photoresists also leave residues during the lithographic steps and dope the graphene in strong hole-doping states along with water and oxygen molecules. In this article, we tested three types of photoresists for their effects on graphene's electrical properties. It was found that a specific photoresist can significantly reduce the amount of hole-doping of the graphene transistor more than other photoresists. The use of hydrophobic substrates and additional thermal treatment can help reducing the hole-doping further.
URI
https://iopscience.iop.org/article/10.1088/0957-4484/27/50/505205/metahttp://repository.hanyang.ac.kr/handle/20.500.11754/100673
ISSN
0957-4484; 1361-6528
DOI
10.1088/0957-4484/27/50/505205
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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