Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 김우희 | - |
dc.date.accessioned | 2019-03-06T02:02:20Z | - |
dc.date.available | 2019-03-06T02:02:20Z | - |
dc.date.issued | 2017-02 | - |
dc.identifier.citation | JOURNAL OF CHEMICAL PHYSICS, v. 146, No. 5, Article no. 052802 | en_US |
dc.identifier.issn | 0021-9606 | - |
dc.identifier.uri | https://aip.scitation.org/doi/10.1063/1.4961459 | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/100497 | - |
dc.description.abstract | For atomic layer deposition (ALD) of doped, ternary, and quaternary materials achieved by combining multiple binary ALD processes, it is often difficult to correlate the material properties and growth characteristics with the process parameters due to a limited understanding of the underlying surface chemistry. In this work, in situ Fourier transform infrared (FTIR) spectroscopy was employed during ALD of zinc-oxide, tin-oxide, and zinc-tin-oxide (ZTO) with the precursors diethylzinc (DEZ), tetrakis(dimethylamino)tin (TDMASn), and H2O. The main aim was to investigate the molecular basis for the nucleation delay during ALD of ZTO, observed when ZnO ALD is carried out after SnO2 ALD. Gas-phase FTIR spectroscopy showed that dimethylamine, the main reaction product of the SnO2 ALD process, is released not only during SnO2 ALD but also when depositing ZnO after SnO2, indicating incomplete removal of the ligands of the TDMASn precursor from the surface. Transmission FTIR spectroscopy performed during ALD on SiO2 powder revealed that a significant fraction of the ligands persist during both SnO2 and ZnO ALD. These observations provide experimental evidence for a recently proposed mechanism, based on theoretical calculations, suggesting that the elimination of precursor ligands is often not complete. In addition, it was found that the removal of precursor ligands by H2O exposure is even less effective when ZnO ALD is carried out after SnO2 ALD, which likely causes the nucleation delay in ZnO ALD during the deposition of ZTO. The underlying mechanisms and the consequences of the incomplete elimination of precursor ligands are discussed. | en_US |
dc.description.sponsorship | The authors would like to thank Vincent Vandalon (Eindhoven University) for fruitful discussions and Rungthiwa Methaapanon for setting up the ALD reactor. This work was supported by the Department of Energy under Award No. DE-SC0004782. A.J.M.M. was supported by the Netherlands Organization for Scientific Research (No. NWO-Rubicon 680-50-1309). | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | AMER INST PHYSICS | en_US |
dc.subject | DENSITY-FUNCTIONAL THEORY | en_US |
dc.subject | SURFACE-CHEMISTRY | en_US |
dc.subject | BUFFER LAYERS | en_US |
dc.subject | SOLAR-CELLS | en_US |
dc.subject | GROWTH | en_US |
dc.subject | FILMS | en_US |
dc.subject | SILICON | en_US |
dc.subject | ALUMINA | en_US |
dc.title | Incomplete elimination of precursor ligands during atomic layer deposition of zinc-oxide, tin-oxide, and zinc-tin-oxide | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1063/1.4961459 | - |
dc.relation.journal | JOURNAL OF CHEMICAL PHYSICS | - |
dc.contributor.googleauthor | Mackus, Adriaan J. M. | - |
dc.contributor.googleauthor | Maclsaac, Callisto | - |
dc.contributor.googleauthor | Kim, Woo-Hee | - |
dc.contributor.googleauthor | Bent, Stacey F. | - |
dc.relation.code | 2017000313 | - |
dc.sector.campus | E | - |
dc.sector.daehak | COLLEGE OF ENGINEERING SCIENCES[E] | - |
dc.sector.department | DEPARTMENT OF MATERIALS SCIENCE AND CHEMICAL ENGINEERING | - |
dc.identifier.pid | wooheekim | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.