Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 정진욱 | - |
dc.date.accessioned | 2019-03-06T00:56:57Z | - |
dc.date.available | 2019-03-06T00:56:57Z | - |
dc.date.issued | 2016-10 | - |
dc.identifier.citation | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v. 16, NO. 10, Page. 11104-11108 | en_US |
dc.identifier.issn | 1533-4880 | - |
dc.identifier.issn | 1533-4899 | - |
dc.identifier.uri | https://www.ingentaconnect.com/content/asp/jnn/2016/00000016/00000010/art00177 | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/100484 | - |
dc.description.abstract | To enlarge wafer size, plasma processing reactors must be scaled up. However, this change causes variations of the plasma parameters and gas residence time that are directly related to the processing results. To maintain these parameters as the chamber-size increases, accurate control of the external variables, such as the input power, gas pressure, and flow rate, is required. In this paper, these basic process parameters are calculated through 0-dimensional (global) plasma model including multistep ionizations and pumping equations, and applied to match the plasma parameters and gas residence time in experiment and simulation. These results can be used as a reference to determine the external variables as a chamber scales up. | en_US |
dc.description.sponsorship | This work was supported by the Industrial Strategic Technology Development Program (10041681, 10050500) and the MOTIE/KSRC support program (10052861) for the development of the future semiconductor device. | en_US |
dc.language.iso | en | en_US |
dc.publisher | AMER SCIENTIFIC PUBLISHERS | en_US |
dc.subject | Scale-Up | en_US |
dc.subject | Plasma Parameters | en_US |
dc.subject | Process Parameters | en_US |
dc.subject | Global Model | en_US |
dc.subject | Recipe Solution | en_US |
dc.title | Experimental and Theoretical Investigation on the Scale-Up of a Plasma Reactor | en_US |
dc.type | Article | en_US |
dc.relation.no | 10 | - |
dc.relation.volume | 16 | - |
dc.identifier.doi | 10.1166/jnn.2016.13298 | - |
dc.relation.page | 11104-11108 | - |
dc.relation.journal | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | - |
dc.contributor.googleauthor | Kim, Dong-Hwan | - |
dc.contributor.googleauthor | Park, Il-Seo | - |
dc.contributor.googleauthor | Kang, Hyun-Ju | - |
dc.contributor.googleauthor | Park, Ji-Hwan | - |
dc.contributor.googleauthor | Chung, Chin-Wook | - |
dc.relation.code | 2016003411 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DIVISION OF ELECTRICAL AND BIOMEDICAL ENGINEERING | - |
dc.identifier.pid | joykang | - |
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