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Thermal Adsorption-Enhanced Atomic Layer Etching of Si3N4

Title
Thermal Adsorption-Enhanced Atomic Layer Etching of Si3N4
Author
김우희
Keywords
ULTRACLEAN ECR PLASMA; AR NEUTRAL BEAM; SILICON-NITRIDE; THIN-FILMS; BCL3 GAS; MECHANISM; SELECTIVITY; DEPOSITION; XPS
Issue Date
2017-11
Publisher
A V S AMER INST PHYSICS
Citation
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, v. 36, No. 1, Article no. 01B104
Abstract
Atomic layer etching (ALE) is an alternative method for nanopatterning in which atomic layers of material are removed by sequential self-limiting surface reactions. In this study, the authors report a new cyclic process for atomic layer etching of Si3N4 films achieved by alternating exposure steps of CH3F gas adsorption and Arthorn bombardment. Self-limiting etching characteristics of the ALE process are demonstrated as a function of both CH3F etchant flow rate and CH3F exposure time. From comparative studies on the amount of Si3N4 etched using the ALE mode versus pure Arthorn ion sputtering, it is found that the ALE process operates with an ALE synergy factor of similar to 67% and also removes Si3N4 with better uniformity due to cooperative interactions between the self-limited CH3F chemisorption and the Arthorn ion sputtering. Based on both the chemical bonding changes following the CH3F etchant exposure and reaction product analyses during the Arthorn plasma step, possible etch reaction steps for the ALE Si3N4 process are proposed. Published by the AVS.
URI
https://avs.scitation.org/doi/abs/10.1116/1.5003271https://repository.hanyang.ac.kr/handle/20.500.11754/99224
ISSN
0734-2101; 1520-8559
DOI
10.1116/1.5003271
Appears in Collections:
COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > MATERIALS SCIENCE AND CHEMICAL ENGINEERING(재료화학공학과) > Articles
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