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A microfabricated sun sensor using GaN-on-sapphire ultraviolet photodetector arrays

Title
A microfabricated sun sensor using GaN-on-sapphire ultraviolet photodetector arrays
Author
소홍윤
Keywords
HIGH-TEMPERATURE; MSM PHOTODETECTORS; CURRENT TRANSPORT; SEMICONDUCTOR; MECHANISMS; ELECTRODES; HETEROJUNCTION; DETECTORS; RADIATION
Issue Date
2016-09
Publisher
AMER INST PHYSICS
Citation
REVIEW OF SCIENTIFIC INSTRUMENTS, v. 87, no. 9, page. 1-6
Abstract
A miniature sensor for detecting the orientation of incident ultraviolet light was microfabricated using gallium nitride (GaN)-on-sapphire substrates and semi-transparent interdigitated gold electrodes for sun sensing applications. The individual metal-semiconductor-metal photodetector elements were shown to have a stable and repeatable response with a high sensitivity (photocurrent-to-dark current ratio (PDCR) = 2.4 at -1 V bias) and a high responsivity (3200 A/W at -1 V bias) under ultraviolet (365 nm) illumination. The 3 x 3 GaN-on-sapphire ultraviolet photodetector array was integrated with a gold aperture to realize a miniature sun sensor (1.35 mm x 1.35 mm) capable of determining incident light angles with a +/- 45 degrees field of view. Using a simple comparative figure of merit algorithm, measurement of incident light angles of 0 degrees and 45 degrees was quantitatively and qualitatively (visually) demonstrated by the sun sensor, supporting the use of GaN-based sun sensors for orientation, navigation, and tracking of the sun within the harsh environment of space. Published by AIP Publishing.
URI
https://aip.scitation.org/doi/10.1063/1.4962704https://repository.hanyang.ac.kr/handle/20.500.11754/76871
ISSN
0034-6748; 1089-7623
DOI
10.1063/1.4962704
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MECHANICAL ENGINEERING(기계공학부) > Articles
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