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The influence of chemical reactivity of surface defects on ambient-stable InSe-based nanodevices

Title
The influence of chemical reactivity of surface defects on ambient-stable InSe-based nanodevices
Author
Bukhvalov, Danil
Keywords
FIELD-EFFECT TRANSISTORS; HIGH-PERFORMANCE; 2-DIMENSIONAL MATERIAL; GRAPHENE; LAYER; MOS2; PHOTODETECTORS; HETEROJUNCTION; DEGRADATION; MECHANISMS
Issue Date
2016-06
Publisher
ROYAL SOC CHEMISTRY
Citation
NANOSCALE, v. 8, NO 16, Page. 8474-8479
Abstract
We demonstrate that, in contrast to most two-dimensional materials, ultrathin flakes of InSe are stable under ambient conditions. Despite their ambient stability, InSe-based nanodevices show an environmental p-type doping, suppressed by capping InSe with hexagonal boron nitride. By means of transport experiments, density functional theory and vibrational spectroscopy, we attribute the p-type doping assumed by uncapped InSe under an ambient atmosphere to the decomposition of water at Se vacancies. We have estimated the site-dependent adsorption energy of O-2, N-2, H2O, CO and CO2 on InSe. A stable adsorption is found only for the case of H2O, with a charge transfer of only 0.01 electrons per water molecule.
URI
http://pubs.rsc.org/en/Content/ArticleLanding/2016/NR/C6NR01262K#!divAbstracthttps://repository.hanyang.ac.kr/handle/20.500.11754/73302
ISSN
2040-3364; 2040-3372
DOI
10.1039/c6nr01262k
Appears in Collections:
COLLEGE OF NATURAL SCIENCES[S](자연과학대학) > CHEMISTRY(화학과) > Articles
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