Improved Oxygen Diffusion Barrier Properties of Ruthenium-Titanium Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
- Title
- Improved Oxygen Diffusion Barrier Properties of Ruthenium-Titanium Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
- Author
- 한태희
- Keywords
- Plasma-Enhanced Atomic Layer Deposition; Oxygen Diffusion Barrier; Ruthenium-Titanium Nitride; FRAM; DRAM
- Issue Date
- 2011-01
- Publisher
- AMER SCIENTIFIC PUBLISHERS
- Citation
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY; JAN 2011, 11 1, p671-p674, 4p.
- Abstract
- Ru-TiN thin films were prepared from bis(ethylcyclopentadienyl)ruthenium and tetrakis(dimethylamino)titanium using plasma-enhanced atomic layer deposition (PEALD). The Ru and TiN were deposited sequentially to intermix TiN with Ru. The composition of Ru-TiN films was controlled precisely by changing the number of deposition cycles allocated to Ru, while fixing the number of deposition cycles allocated to TiN. Although both Ru and TIN thin films have a polycrystalline structure, the microstructure of the Ru-TiN films changed from a TiN-like polycrystalline structure to a nanocrystalline on increasing the Ru intermixing ratio. Moreover, the electrical resistivity of the Ru-0.67-TiN0.33 thin films is sufficiently low at 190 mu Omega.cm and was maintained even after O-2 annealing at 750 degrees C. Therefore, Ru-TiN thin films can be utilized as a oxygen diffusion barrier material for future dynamic (DRAM) and ferroelectric (FeRAM) random access memory capacitors.
- URI
- http://www.ingentaconnect.com/content/asp/jnn/2011/00000011/00000001/art00121https://repository.hanyang.ac.kr/handle/20.500.11754/72734
- ISSN
- 1533-4880
- DOI
- 10.1166/jnn.2011.3222
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > ORGANIC AND NANO ENGINEERING(유기나노공학과) > Articles
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