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Fabrication of a Graphene/ZnO based p-n junction device and its ultraviolet photoresponse properties

Title
Fabrication of a Graphene/ZnO based p-n junction device and its ultraviolet photoresponse properties
Author
좌용호
Keywords
p-Doped graphene; n-Type ZnO; Photoresponse Charge transfer; Work function; FILMS
Issue Date
2017-09
Publisher
ELSEVIER SCIENCE BV
Citation
APPLIED SURFACE SCIENCE, v. 415, Page. 2-7
Abstract
Graphene with a zero-bandgap energy is easily doped using a chemical dopant, and a shift upwards or downwards in the Fermi level is generated. Moreover, the integration of inorganic material into the doped graphene changes the physical and chemical properties of the material. For this purpose, we successfully fabricated a p-n junction device by depositing an n-typed ZnO layer on p-doped graphene and studied the ultraviolet (UV) photoresponse properties under a photocurrent (UV light on) and a dark current (UV light off). Two devices, lateral and vertical, were developed by alternating the thickness of the ZnO layer, and the photoresponse mechanisms were described on the basis of the contact potential difference. (C) 2016 Elsevier B.V.All rights reserved.
URI
https://www.sciencedirect.com/science/article/pii/S016943321632284Xhttps://repository.hanyang.ac.kr/handle/20.500.11754/72381
ISSN
0169-4332; 1873-5584
DOI
10.1016/j.apsusc.2016.10.159
Appears in Collections:
COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > MATERIALS SCIENCE AND CHEMICAL ENGINEERING(재료화학공학과) > Articles
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