TEM characterization of a TiN-MgAl2O4 epitaxial interface

Abstract

The interface between TiN and MgAl2O4 compounds was investigated using TEM analysis in order to understand the formation mechanism of TiN on the surface of MgAl2O4 compound through the orientation relationship of the TiN-MgAl2O4 interface. The epitaxial growth of TiN on the surface of MgAl2O4 compound is feasible due to the low planar lattice disregistry between materials as well as due to the same crystal system. TiN was confirmed to nucleate on the surface of MgAl2O4 compound due to an epitaxial orientation relationship between the TiN and MgAl2O4 phases. (C) 2016 Elsevier B.V. All rights reserved.