THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY,Vol.58 , No.41 [2011],906-910(5쪽)
Abstract
We investigated the effect of a slight tilt of an r-plane sapphire substrate on the morphological properties of a-plane GaN grown by using metal-organic chemical vapor deposition. The tilt angle of the r-plane sapphire was varied from 0˚ to -0.65˚ toward the c-axis of sapphire. Slight tilt angles of the r-plane sapphire toward the c-axis of sapphire ranging from 0˚ to -0.37˚ were found to be suitable for growing triangular pit-free a-plane GaN with a microscopically smooth surface. Tilt angles larger than -0.37˚ improved the crystalline quality in the direction of the m- axis of GaN but caused non-uniform growth and pit formation on the surface.