Electrical and Structural Analyses of Solution-Processed Li-Doped ZnO Thin Film Transistors Exposed to Ambient Conditions
- Title
- Electrical and Structural Analyses of Solution-Processed Li-Doped ZnO Thin Film Transistors Exposed to Ambient Conditions
- Author
- 홍진표
- Keywords
- LOW-TEMPERATURE
- Issue Date
- 2013-01
- Publisher
- JAPAN SOCIETY OF APPLIED PHYSICS
- Citation
- Applied Physics Express, January 2013, 6(1), 11101p ~ 0111014p
- Abstract
- We report the electrical and structural features of various Li-doped ZnO thin-film transistors (TFTs) grown via a chemical solution process at low temperature. The time-dependent transfer curves for the 10 at. % Li-doped ZnO TFTs, including second-order lowered off-current magnitude, exhibited only a negative shift of -1.07 V for 25 days, compared with a -21.83 V negative shift of undoped ZnO TFTs. Secondary ion mass spectroscopy and X-ray photoelectron spectroscopy observations clearly demonstrated the structure of Li dopants and the reduction of oxygen vacancies after appropriate doping processes. Finally, the nature of improved stability in the Li-doped ZnO TFTs is described. (C) 2013 The Japan Society of Applied Physics
- URI
- http://iopscience.iop.org/article/10.7567/APEX.6.011101/metahttps://repository.hanyang.ac.kr/handle/20.500.11754/69736
- ISSN
- 1882-0778
- DOI
- 10.7567/APEX.6.011101
- Appears in Collections:
- COLLEGE OF NATURAL SCIENCES[S](자연과학대학) > PHYSICS(물리학과) > Articles
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