Multi-step ion beam etching of sub-30 nm magnetic tunnel junctions for reducing leakage and MgO barrier damage
- Title
- Multi-step ion beam etching of sub-30 nm magnetic tunnel junctions for reducing leakage and MgO barrier damage
- Author
- 이승백
- Keywords
- PERPENDICULAR-ANISOTROPY
- Issue Date
- 2012-03
- Publisher
- Amer INST Physics
- Citation
- Journal of Applied Physics, 2012, 111(7), 07C722
- Abstract
- We have demonstrated the fabrication of sub 30 nm magnetic tunnel junctions (MTJs) with perpendicular magnetic anisotropy. The multi-step ion beam etching (IBE) process performed for 18 min between 45 degrees and 30 degrees, at 500 V combined ion supply voltage, resulted in a 55 nm tall MTJ with 28 nm diameter. We used a negative tone electron beam resist as the hard mask, which maintained its lateral dimension during the IBE, allowing almost vertical pillar side profiles. The measurement results showed a tunnel magneto-resistance ratio of 13% at 1 k Omega junction resistance. With further optimization in IBE energy and multi-step etching process, it will be possible to fabricate perpendicularly oriented MTJs for future sub 30 nm non-volatile magnetic memory applications. (C) 2012 American Institute of Physics. [doi:10.1063/1.3679153]
- URI
- https://aip.scitation.org/doi/10.1063/1.367915https://repository.hanyang.ac.kr/handle/20.500.11754/69464
- ISSN
- 0021-8979; 1089-7550
- DOI
- 10.1063/1.367915
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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