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dc.contributor.author박진성-
dc.date.accessioned2018-04-16T05:00:47Z-
dc.date.available2018-04-16T05:00:47Z-
dc.date.issued2012-01-
dc.identifier.citationJAPANESE JOURNAL OF APPLIED PHYSICS, Vol.51, No.1 [2012], p015601 ~ 0156014en_US
dc.identifier.issn0021-4922-
dc.identifier.urihttp://iopscience.iop.org/article/10.1143/JJAP.51.015601/meta-
dc.identifier.urihttp://hdl.handle.net/20.500.11754/67910-
dc.description.abstractThis paper reports the crystallization of amorphous InGaZnO (a-IGZO) films using solid-phase crystallization and discusses the mechanisms responsible for degradation of device performance after crystallization. The field-effect mobility (mu(FE)) and subthreshold gate swing (S) value of the nanocrystallite embedded-IGZO thin-film transistors (TFTs) were significantly degraded to 3.12 cm(2) V-1 s(-1) and 1.26 V/decade, respectively, compared to those (13.72 cm(2) V-1 s(-1) and 0.38 V/decade) for the a-IGZO TFTs. The decreased mu(FE) is explained based on indium deficiency by diffusion of its atoms in the channel layer and grain-boundary trapping of mobile carriers. The predominant mechanism of increasing S value has been attributed to increased interface and grain-boundary trapping.en_US
dc.description.sponsorshipThis work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korean Ministry of Education, Science and Technology (MEST, No. 2007-0055837).en_US
dc.language.isoenen_US
dc.publisherIOP Publishingen_US
dc.subjectAMORPHOUS OXIDE SEMICONDUCTORSen_US
dc.titleOrigin of Device Performance Degradation in InGaZnO Thin-Film Transistors after Crystallizationen_US
dc.typeArticleen_US
dc.relation.no1-
dc.relation.volume51-
dc.identifier.doi10.1143/JJAP.51.015601-
dc.relation.page1-1-
dc.relation.journalJAPANESE JOURNAL OF APPLIED PHYSICS-
dc.contributor.googleauthorAhn, B.D.-
dc.contributor.googleauthorShin, H.S.-
dc.contributor.googleauthorKim, D.L.-
dc.contributor.googleauthorLee, S.M.-
dc.contributor.googleauthorPark, J.-S.-
dc.contributor.googleauthorKim, G.H.-
dc.contributor.googleauthorKim, H.J.-
dc.relation.code2012217131-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentDIVISION OF MATERIALS SCIENCE AND ENGINEERING-
dc.identifier.pidjsparklime-
dc.identifier.researcherID8044372500-
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COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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