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Origin of Device Performance Degradation in InGaZnO Thin-Film Transistors after Crystallization

Title
Origin of Device Performance Degradation in InGaZnO Thin-Film Transistors after Crystallization
Author
박진성
Keywords
AMORPHOUS OXIDE SEMICONDUCTORS
Issue Date
2012-01
Publisher
IOP Publishing
Citation
JAPANESE JOURNAL OF APPLIED PHYSICS, Vol.51, No.1 [2012], p015601 ~ 0156014
Abstract
This paper reports the crystallization of amorphous InGaZnO (a-IGZO) films using solid-phase crystallization and discusses the mechanisms responsible for degradation of device performance after crystallization. The field-effect mobility (mu(FE)) and subthreshold gate swing (S) value of the nanocrystallite embedded-IGZO thin-film transistors (TFTs) were significantly degraded to 3.12 cm(2) V-1 s(-1) and 1.26 V/decade, respectively, compared to those (13.72 cm(2) V-1 s(-1) and 0.38 V/decade) for the a-IGZO TFTs. The decreased mu(FE) is explained based on indium deficiency by diffusion of its atoms in the channel layer and grain-boundary trapping of mobile carriers. The predominant mechanism of increasing S value has been attributed to increased interface and grain-boundary trapping.
URI
http://iopscience.iop.org/article/10.1143/JJAP.51.015601/metahttp://hdl.handle.net/20.500.11754/67910
ISSN
0021-4922
DOI
10.1143/JJAP.51.015601
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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