Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 이성재 | - |
dc.date.accessioned | 2018-04-16T04:04:14Z | - |
dc.date.available | 2018-04-16T04:04:14Z | - |
dc.date.issued | 2012-01 | - |
dc.identifier.citation | Thin Solid Films, 2012, 520(6), P.2166-2169 | en_US |
dc.identifier.issn | 0040-6090 | - |
dc.identifier.uri | https://www.sciencedirect.com/science/article/pii/S0040609011017305?via%3Dihub | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11754/67748 | - |
dc.description.abstract | 10 and 6 nm erbium-silicided n-type Schottky barrier metal-oxide-semiconductor field-effect transistors (SB-MOSFETs) were manufactured. The manufactured 10 nm n-type SB-MOSFET showed a large on/off current ratio (> 106) with low leakage current less than 10− 5 μA/μm due to the existence of the robust Schottky barrier between source and channel region. The saturation currents were 550 and 320 μA/μm when drain and gate voltages were 2 V and 3 V, for the 10 and 6 nm erbium-silicided n-type SB-MOSFETs, respectively. The manufactured SB-MOSFETs exhibited superior short channel characteristics due to the existence of Schottky barrier between source and channel region. | en_US |
dc.language.iso | en | en_US |
dc.publisher | Elsevier Science B.V., Amsterdam. | en_US |
dc.subject | Erbium silicide | en_US |
dc.subject | Schottky barriers | en_US |
dc.subject | Metal-oxide-semiconductor field-effect transistors | en_US |
dc.subject | Short channel | en_US |
dc.subject | Transmission electron microscopy | en_US |
dc.title | The characteristics of sub-10 nm gate-length erbium-silicided n-type Schottky barrier metal-oxide-semiconductor field-effect-transistors | en_US |
dc.type | Article | en_US |
dc.relation.no | 6 | - |
dc.relation.volume | 520 | - |
dc.identifier.doi | 10.1016/j.tsf.2011.09.081 | - |
dc.relation.page | 2166-2169 | - |
dc.relation.journal | THIN SOLID FILMS | - |
dc.contributor.googleauthor | Jang, M. | - |
dc.contributor.googleauthor | Lee, S. | - |
dc.relation.code | 2012209470 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF NATURAL SCIENCES[S] | - |
dc.sector.department | DEPARTMENT OF PHYSICS | - |
dc.identifier.pid | leesj | - |
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