The characteristics of sub-10 nm gate-length erbium-silicided n-type Schottky barrier metal-oxide-semiconductor field-effect-transistors
- Title
- The characteristics of sub-10 nm gate-length erbium-silicided n-type Schottky barrier metal-oxide-semiconductor field-effect-transistors
- Author
- 이성재
- Keywords
- Erbium silicide; Schottky barriers; Metal-oxide-semiconductor field-effect transistors; Short channel; Transmission electron microscopy
- Issue Date
- 2012-01
- Publisher
- Elsevier Science B.V., Amsterdam.
- Citation
- Thin Solid Films, 2012, 520(6), P.2166-2169
- Abstract
- 10 and 6 nm erbium-silicided n-type Schottky barrier metal-oxide-semiconductor field-effect transistors (SB-MOSFETs) were manufactured. The manufactured 10 nm n-type SB-MOSFET showed a large on/off current ratio (> 106) with low leakage current less than 10− 5 μA/μm due to the existence of the robust Schottky barrier between source and channel region. The saturation currents were 550 and 320 μA/μm when drain and gate voltages were 2 V and 3 V, for the 10 and 6 nm erbium-silicided n-type SB-MOSFETs, respectively. The manufactured SB-MOSFETs exhibited superior short channel characteristics due to the existence of Schottky barrier between source and channel region.
- URI
- https://www.sciencedirect.com/science/article/pii/S0040609011017305?via%3Dihubhttp://hdl.handle.net/20.500.11754/67748
- ISSN
- 0040-6090
- DOI
- 10.1016/j.tsf.2011.09.081
- Appears in Collections:
- COLLEGE OF NATURAL SCIENCES[S](자연과학대학) > PHYSICS(물리학과) > Articles
- Files in This Item:
There are no files associated with this item.
- Export
- RIS (EndNote)
- XLS (Excel)
- XML