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Threshold-Voltage-Shift Compensation and Suppression Method Using Hydrogenated Amorphous Silicon Thin-Film Transistors for Large Active Matrix Organic Light-Emitting Diode Displays

Title
Threshold-Voltage-Shift Compensation and Suppression Method Using Hydrogenated Amorphous Silicon Thin-Film Transistors for Large Active Matrix Organic Light-Emitting Diode Displays
Author
권오경
Keywords
PIXEL CIRCUITS
Issue Date
2012-03
Publisher
IOP Science
Citation
Japanese Journal of Applied Physics, Vol.51, No.3 P2 [2012], p03CD01-1 ~ 03CD01-4
Abstract
A threshold-voltage-shift compensation and suppression method for active matrix organic light-emitting diode (AMOLED) displays fabricated using a hydrogenated amorphous silicon thin-film transistor (TFT) backplane is proposed. The proposed method compensates for the threshold voltage variation of TFTs due to different threshold voltage shifts during emission time and extends the lifetime of the AMOLED panel. Measurement results show that the error range of emission current is from -1.1 to +1.7% when the threshold voltage of TFTs varies from 1.2 to 3.0 V.
URI
http://iopscience.iop.org/article/10.1143/JJAP.51.03CD01/metahttp://hdl.handle.net/20.500.11754/67504
ISSN
0021-4922
DOI
10.1143/JJAP.51.03CD01
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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