Effect of CdSe nanoparticles in polymethylmethacrylate tunneling layer on the performance of nonvolatile organic memory device

Abstract

Organic memory devices based on CdSe nanoparticles (NPs) embedded in polymethylmethacrylate (PMMA) insulating layer are demonstrated. The use of NPs/polymer blend as a tunneling layer for non-volatile organic memory has proven to be an alternative route to manipulate and improve the device characteristics. The memory effect is adjustable upon changing the concentration of CdSe NPs within the PMMA tunneling insulator, and the tunable device performance is ascribed to the different trap densities in floating gate. The capacitance change is analyzed by monitoring the charge transport between pentacene and the CdSe NPs. Our in-depth study reveals that the increase in CdSe NPs leads to a wider memory window and better hysteresis characteristics with a maximum window of −8.6 V at VGS of −30 V for 1 s. This result demonstrates the potential application of organic/inorganic hybrid floating gate structure in organic memory devices.