Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 김은규 | - |
dc.date.accessioned | 2018-04-16T00:39:40Z | - |
dc.date.available | 2018-04-16T00:39:40Z | - |
dc.date.issued | 2012-06 | - |
dc.identifier.citation | Thin Solid Films, 2012, 520(18), P.5997-6000 | en_US |
dc.identifier.issn | 0040-6090 | - |
dc.identifier.uri | https://www.sciencedirect.com/science/article/pii/S0040609012006001?via%3Dihub | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11754/67156 | - |
dc.description.abstract | Heterojunction diodes of n-type ZnO were fabricated on a p-type Si(100) substrate using an ultra-high vacuum radio frequency magnetron sputtering method at room temperature. A short-time post-annealing process was performed to prevent inter-diffusion of Zn, dopants, and Si atoms. The post-annealing process at 600 degrees C enhanced the crystallinity of ZnO films and produced a high forward to reverse current ratio of the heterojunction diode with a barrier height of approximately 0.336 eV. A thin SiOx layer at the interface of the ZnO film and Si substrate appeared distinctly at the 600 degrees C annealing, however the post-annealing at 700 degrees C showed an a-(Zn2xSi1-xO2) structure caused by diffusion of silicon into the ZnO film. In the n-ZnO/p-Si sample annealed at 700 degrees C, a rapid change in the barrier height was considered due to the effect of the dopant segregation from the substrate and deformation of the a-SiOx structure. (C) 2012 Elsevier B.V. All rights reserved. | en_US |
dc.description.sponsorship | This work was supported by the Mid-career Researcher Program through the National Research Foundation of Korea (NRF) grant funded by the Korean government (MEST) (grant No. 2011-0018033) and by the Korea Institute of Science and Technology Program. | en_US |
dc.language.iso | en | en_US |
dc.publisher | Elsevier Science SA | en_US |
dc.subject | Zinc oxide | en_US |
dc.subject | Heterojunction | en_US |
dc.subject | Electronic transport | en_US |
dc.subject | Thin films | en_US |
dc.title | Fabrication of a n-ZnO/p-Si heterojunction diode by ultra-high vacuum magnetron sputtering | en_US |
dc.title.alternative | p-Si heterojunction diode by ultra-high vacuum magnetron sputtering | en_US |
dc.type | Article | en_US |
dc.relation.no | 18 | - |
dc.relation.volume | 520 | - |
dc.identifier.doi | 10.1016/j.tsf.2012.05.026 | - |
dc.relation.page | 5997-6000 | - |
dc.relation.journal | THIN SOLID FILMS | - |
dc.contributor.googleauthor | Cho, Seong Gook | - |
dc.contributor.googleauthor | Lee, Dong Uk | - |
dc.contributor.googleauthor | Pak, Sang Woo | - |
dc.contributor.googleauthor | Nahm, Tschang-Uh | - |
dc.contributor.googleauthor | Kim, Eun Kyu | - |
dc.relation.code | 2012209470 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF NATURAL SCIENCES[S] | - |
dc.sector.department | DEPARTMENT OF PHYSICS | - |
dc.identifier.pid | ek-kim | - |
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