Characterization of the SnO2 Based Thin Film Transistors with Ga, In and Hf Doping

Abstract

We investigated the effects of doping tin oxide thin film transistors (TFTs) with Ga, In, and Hf. The quantity of doping impurities added to the SnO2-TFT channel layer was as follows: Ga (6.3-21.4 at.%), In (9.6-55.6 at.%), and Hf (1.2-2.7 at.%). Hafnium and gallium doping of SnO2 thin film decreased the carrier concentration, possibly due to a decrease in field effect mobility, and reduced oxygen vacancy-related defects. Indium-doped SnO2-TFTs exhibited high performance with a high field-effect mobility of > 20 cm(2) V-1 s(-1). The current on/off ratio and the subthreshold swing of In-doped SnO2-TFTs was 1 x 10(9) and 0.5 V/decade, respectively. These results demonstrate that Ga, In, and Hf doping can effectively enhance the performance of SnO2-based TFT devices.