Dielectric function of Si1-xGex films grown on silicon-on-insulator substrates
- Title
- Dielectric function of Si1-xGex films grown on silicon-on-insulator substrates
- Author
- 안진호
- Issue Date
- 2014-06
- Publisher
- AMER INST PHYSICS, CIRCULATION &FULFILLMENT DIV, 2 HUNTINGTON QUADRANGLE, STE 1 N O 1, MELVILLE, NY 11747-4501 USA
- Citation
- JOURNAL OF APPLIED PHYSICS,115(23),6pages
- Abstract
- The dielectric functions of undoped and P-doped Si1-xGex (SiGe) films with a compressive strain on silicon-on-insulator (SOI) substrates are obtained by using spectroscopic ellipsometry. The respective Kato-Adachi and Tauc-Lorentz models are best fitted to the undoped and P-doped SiGe films to obtain their complex dielectric functions. The undoped SiGe films are characterized by multimodal peaks in the dielectric function, whereas the P-doped SiGe films exhibit only a broad peak. Further, the E-0 and E-1 critical points (CPs) of the undoped SiGe films are strongly dependent on the Ge concentration, whereas the E-2 CPs are independent of concentration. The E-0 and E-2 CPs in the undoped SiGe films on an SOI substrate are lower than those of SiGe on a bulk-Si substrate owing to the higher strain. For P doping in SiGe, its dose causes non-monotonic variations in E-g and E-0. (C) 2014 AIP Publishing LLC.
- URI
- http://aip.scitation.org/doi/10.1063/1.4881457http://hdl.handle.net/20.500.11754/56147
- ISSN
- 0021-8979; 1089-7550
- DOI
- 10.1063/1.4881457
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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