Magnetotransport properties of Fe/GaAlAs/GaMnAs hybrid magnetic trilayer structures

Title
Magnetotransport properties of Fe/GaAlAs/GaMnAs hybrid magnetic trilayer structures
Other Titles
GaAlAs
Author
김은규
Keywords
TUNNELING MAGNETORESISTANCE
Issue Date
2014-05
Publisher
AMER INST PHYSICS, 1305 WALT WHITMAN RD, STE 300, MELVILLE, NY 11747-4501 USA
Citation
JOURNAL OF APPLIED PHYSICS, 2014, 115(17), P. 17C715-1~17C715-3
Abstract
We discuss tunneling magnetoresistance (TMR) phenomena observed in hybrid magnetic tunnel junctions (MTJs) fabricated from a Fe/GaAlAs/GaMnAs trilayer. The TMR clearly shows abrupt changes of resistance that depends on the relative alignments of magnetization in the two magnetic layers comprising the MTJ. The TMR ratio of the structure strongly depends on the bias voltage, reaching values up to similar to 45% when the bias voltage is low (similar to 0.2mV). In addition, the device exhibits intermediate TMR values, which correspond to non-collinear alignments of magnetization in the GaMnAs and the Fe layers. Such alignments are possible due to the presence of two magnetic easy axes both in both magnetic layers originating from their strong cubic magnetic anisotropy. The TMR states realized in such Fe/GaAlAs/GaMnAs MTJs are excellent candidates for use in multi-valued memory storage devices. (C) 2014 AIP Publishing LLC.
URI
https://aip.scitation.org/doi/10.1063/1.4863375http://hdl.handle.net/20.500.11754/54360
ISSN
0021-8979; 1089-7550
DOI
10.1063/1.4863375
Appears in Collections:
COLLEGE OF NATURAL SCIENCES[S](자연과학대학) > PHYSICS(물리학과) > Articles
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