Magnetotransport properties of Fe/GaAlAs/GaMnAs hybrid magnetic trilayer structures
- Title
- Magnetotransport properties of Fe/GaAlAs/GaMnAs hybrid magnetic trilayer structures
- Other Titles
- GaAlAs
- Author
- 김은규
- Keywords
- TUNNELING MAGNETORESISTANCE
- Issue Date
- 2014-05
- Publisher
- AMER INST PHYSICS, 1305 WALT WHITMAN RD, STE 300, MELVILLE, NY 11747-4501 USA
- Citation
- JOURNAL OF APPLIED PHYSICS, 2014, 115(17), P. 17C715-1~17C715-3
- Abstract
- We discuss tunneling magnetoresistance (TMR) phenomena observed in hybrid magnetic tunnel junctions (MTJs) fabricated from a Fe/GaAlAs/GaMnAs trilayer. The TMR clearly shows abrupt changes of resistance that depends on the relative alignments of magnetization in the two magnetic layers comprising the MTJ. The TMR ratio of the structure strongly depends on the bias voltage, reaching values up to similar to 45% when the bias voltage is low (similar to 0.2mV). In addition, the device exhibits intermediate TMR values, which correspond to non-collinear alignments of magnetization in the GaMnAs and the Fe layers. Such alignments are possible due to the presence of two magnetic easy axes both in both magnetic layers originating from their strong cubic magnetic anisotropy. The TMR states realized in such Fe/GaAlAs/GaMnAs MTJs are excellent candidates for use in multi-valued memory storage devices. (C) 2014 AIP Publishing LLC.
- URI
- https://aip.scitation.org/doi/10.1063/1.4863375http://hdl.handle.net/20.500.11754/54360
- ISSN
- 0021-8979; 1089-7550
- DOI
- 10.1063/1.4863375
- Appears in Collections:
- COLLEGE OF NATURAL SCIENCES[S](자연과학대학) > PHYSICS(물리학과) > Articles
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