Nonradiative recombination mechanisms in InGaN/GaN-based light-emitting diodes investigated by temperature-dependent measurements
- Title
- Nonradiative recombination mechanisms in InGaN/GaN-based light-emitting diodes investigated by temperature-dependent measurements
- Other Titles
- GaN-based light-emitting diodes investigated by temperature-dependent measurements
- Author
- 신동수
- Keywords
- EFFICIENCY; INTENSITY; CURRENTS; GREEN; BLUE
- Issue Date
- 2014-04
- Publisher
- AIP Publishing LLC.
- Citation
- Applied Physics Letters, APR 14 2014 , 104(15), p.151108
- Abstract
- Two kinds of InGaN-based light-emitting diodes (LEDs) are investigated to understand the nonradiative carrier recombination processes. Various temperature-dependent measurements such as external quantum efficiency, current-voltage, and electroluminescence spectra are utilized from 50 to 300?K. Based on these experimental results, we analyze the dominant nonradiative recombination mechanism for each LED device. We also analyze the effect of the dominant nonradiative recombination mechanism on the efficiency droop. On the basis of correlation between the efficiency droop and nonradiative recombination mechanisms, we discuss an approach to reducing the efficiency droop for each LED device.
- URI
- https://aip.scitation.org/doi/pdf/10.1063/1.4871870http://hdl.handle.net/20.500.11754/54118
- ISSN
- 0003-6951
- DOI
- 10.1063/1.4871870
- Appears in Collections:
- GRADUATE SCHOOL[S](대학원) > ETC
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