Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 김은규 | - |
dc.date.accessioned | 2018-03-29T07:03:15Z | - |
dc.date.available | 2018-03-29T07:03:15Z | - |
dc.date.issued | 2014-11 | - |
dc.identifier.citation | Journal of Nanoscience and Nanotechnology, 2014, 14(11), P.8654-8658 | en_US |
dc.identifier.issn | 1533-4880 | - |
dc.identifier.issn | 1533-4899 | - |
dc.identifier.uri | http://www.ingentaconnect.com/content/asp/jnn/2014/00000014/00000011/art00095 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11754/53754 | - |
dc.description.abstract | We report the electrical characteristics and conduction mechanism of a resistive switching memory device consisting of V3Si nanocrystals embedded in the SiO2 layer on multi-layered graphene. The V3Si nanocrystals with average size of 5 nm were formed between the SiO2 layers by thin film deposition and post-annealing process at 800 degrees C for 5 s. The current values of high (HRS) and low resistance states (LRS) at 1 V were measured to be about 3.26 x 10(-9) A and 3.11 x 10(-8) A, respectively. The ratio of the HRS and LRS after applying sweeping bias of +/- 6 V appeared to be about 9.54 at 1 V. The resistance switching could originate from the effect of carrier trap and emission into the V3Si nanocrystals via the tunneling, space charge limited current, and thermionic emission mechanisms controlled by the modulation of the Fermi level of the graphene layer. The V3Si nanocrystals memory device has a strong possibility for the application of nonvolatile memory devices. | en_US |
dc.description.sponsorship | This work was supported in part by the National Research Foundation of Korea (NRF), grant funded by the Ministry of Education and the Ministry of Science, ICT and Future Planning (Nos. NRF-2012R1A1A2007035 and NRF-2013R1A2A2A01015824), and by the Research Fund of HYU-2013. | en_US |
dc.language.iso | en | en_US |
dc.publisher | American Scientific Publishers | en_US |
dc.subject | Nanocrystals | en_US |
dc.subject | V3Si | en_US |
dc.subject | Nonvolatile Memory | en_US |
dc.subject | Graphene | en_US |
dc.title | Memory Effect by Carrier Trapping Into V3Si Nanocrystals Among SiO2 Layers on Multi-Layered Graphene Layer | en_US |
dc.type | Article | en_US |
dc.relation.no | 11 | - |
dc.relation.volume | 14 | - |
dc.identifier.doi | 10.1166/jnn.2014.9985 | - |
dc.relation.page | 8654-8658 | - |
dc.relation.journal | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | - |
dc.contributor.googleauthor | Lee, Dong-Uk | - |
dc.contributor.googleauthor | Kim, Dong-wook | - |
dc.contributor.googleauthor | Lee, Kyoung-Su | - |
dc.contributor.googleauthor | Kim, Eun-Kyu | - |
dc.relation.code | 2014033921 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF NATURAL SCIENCES[S] | - |
dc.sector.department | DEPARTMENT OF PHYSICS | - |
dc.identifier.pid | ek-kim | - |
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