Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 조준형 | - |
dc.date.accessioned | 2018-03-28T05:10:20Z | - |
dc.date.available | 2018-03-28T05:10:20Z | - |
dc.date.issued | 2014-11 | - |
dc.identifier.citation | Physical Review Letters, 2014, 113(19), P.196802 | en_US |
dc.identifier.issn | 0031-9007 | - |
dc.identifier.issn | 1079-7114 | - |
dc.identifier.uri | https://journals.aps.org/prl/abstract/10.1103/PhysRevLett.113.196802 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11754/53238 | - |
dc.description.abstract | Exploration and manipulation of electronic states in low-dimensional systems are of great importance in the fundamental and practical aspects of nanomaterial and nanotechnology. Here, we demonstrate that the incorporation of vacancy defects into monatomic indium wires on n-type Si(111) can stabilize electronically phase-separated ground states where the insulating 8 x 2 and metallic 4 x 1 phases coexist. Furthermore, the areal ratio of the two phases in the phase-separated states can be tuned reversibly by electric field or charge doping, and such tunabilities can be quantitatively captured by first principles-based modeling and simulations. The present results extend the realm of electronic phase separation from strongly correlated d-electron materials typically in bulk form to weakly interacting sp-electron systems in reduced dimensionality. | en_US |
dc.description.sponsorship | H. Z., F. M., and H.-J. K contributed equally to this work. This work was supported in part by the NSFC (Grants No. 11434009, No. 11374279, and No. 11034006), NKBRPC (Grant No. 2014CB921102), CAS (Grant No. XDB01020000), SRFDP (Grant No. 20113402110046), FRFCU (Grants No. WK2340000035 and No. WK2340000011), the NRF (Grant No. 2014M2B2A9032247), and the KISTI supercomputing center through the strategic support program (No. KSC-2013-C3-043). H. H. W. acknowledges support from NSF Grant No. DMR-1005488. | en_US |
dc.language.iso | en | en_US |
dc.publisher | American Physical Society | en_US |
dc.subject | CHARGE-DENSITY-WAVE | en_US |
dc.title | Stabilization and Manipulation of Electronically Phase-Separated Ground States in Defective Indium Atom Wires on Silicon | en_US |
dc.type | Article | en_US |
dc.relation.no | 19 | - |
dc.relation.volume | 113 | - |
dc.identifier.doi | 10.1103/PhysRevLett.113.196802 | - |
dc.identifier.doi | 10.1103/PhysRevLett.113.196802 | - |
dc.relation.page | 196802-196802 | - |
dc.relation.journal | PHYSICAL REVIEW LETTERS | - |
dc.contributor.googleauthor | Zhang, Hui | - |
dc.contributor.googleauthor | Ming, Fangfei | - |
dc.contributor.googleauthor | Kim, Hyun-Jung | - |
dc.contributor.googleauthor | Zhu, Hongbin | - |
dc.contributor.googleauthor | Zhang, Qiang | - |
dc.contributor.googleauthor | Weitering, Hanno H. | - |
dc.contributor.googleauthor | Xiao, Xudong | - |
dc.contributor.googleauthor | Zeng, Changgan | - |
dc.contributor.googleauthor | Cho, Jun-Hyung | - |
dc.contributor.googleauthor | Zhang, Zhenyu | - |
dc.relation.code | 2014037611 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF NATURAL SCIENCES[S] | - |
dc.sector.department | DEPARTMENT OF PHYSICS | - |
dc.identifier.pid | chojh | - |
dc.identifier.researcherID | R-7256-2016 | - |
dc.identifier.researcherID | R-7256-2016 | - |
dc.identifier.orcid | http://orcid.org/0000-0002-1785-1835 | - |
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