Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 전형탁 | - |
dc.date.accessioned | 2018-03-28T05:09:02Z | - |
dc.date.available | 2018-03-28T05:09:02Z | - |
dc.date.issued | 2014-11 | - |
dc.identifier.citation | RSC Advances, 2014, 4(105), P.61064-61067 | en_US |
dc.identifier.issn | 2046-2069 | - |
dc.identifier.uri | http://pubs.rsc.org/en/Content/ArticleLanding/2014/RA/C4RA10446C#!divAbstract | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11754/53236 | - |
dc.description.abstract | In this study, Ni/TaOx/NiSi and Ni/TaOx/Ta/TaOx/NiSi devices were fabricated, and the resistive switching (RS) behaviors were investigated. A 2 nm-thick Ta metal layer was deposited between two TaOx films to form a Ni/TaOx/T/TaOx/NiSi stack, which was analyzed using TEM. Based on a linear scale I-V curve and an R-V graph, both devices showed conventional bipolar conductive bridge random access memory (CBRAM) characteristics with formation/rupture of Ni conductive filaments (CFs). The Ta-embedded device showed lower forming/SET voltages and initial resistance due to the reduced effective thickness of TaOx films due to the inserted Ta metal layer. In addition, the Ta-embedded device exhibited improved endurance and resistance distribution due to suppression of the random formation of Ni CFs. In this study, Ni/TaOx/NiSi and Ni/TaOx/T/TaOx/NiSi devices were fabricated, and the resistive switching (RS) behaviors were investigated. A 2 nm-thick Ta metal layer was deposited between two TaOx films to form a Ni/TaOx/T/TaOx/NiSi stack, which was analyzed using TEM. Based on a linear scale I-V curve and an R-V graph, both devices showed conventional bipolar conductive bridge random access memory (CBRAM) characteristics with formation/rupture of Ni conductive filaments (CFs). The Ta-embedded device showed lower forming/SET voltages and initial resistance due to the reduced effective thickness of TaOx films due to the inserted Ta metal layer. In addition, the Ta-embedded device exhibited improved endurance and resistance distribution due to suppression of the random formation of Ni CFs. | en_US |
dc.description.sponsorship | This work was supported by a National Research Foundation (NRF) of Korea grant funded by the Korean government (NRF-2014M3A7B4049367) and (NRF-2014049368) through the NRF of MEST, Republic of Korea. | en_US |
dc.language.iso | en | en_US |
dc.publisher | Royal Society of Chemistry | en_US |
dc.subject | METALLIC FILAMENT | en_US |
dc.title | Spatially confined electric field effect for improved resistive switching behavior of a Ni/Ta-embedded TaOx/NiSi device | en_US |
dc.title.alternative | Ta-embedded TaOx | en_US |
dc.type | Article | en_US |
dc.relation.no | 105 | - |
dc.relation.volume | 4 | - |
dc.identifier.doi | 10.1039/c4ra10446c | - |
dc.relation.page | 61064-61067 | - |
dc.relation.journal | RSC ADVANCES | - |
dc.contributor.googleauthor | Park, Jingyu | - |
dc.contributor.googleauthor | Jeon, Heeyoung | - |
dc.contributor.googleauthor | Kim, Hyunjung | - |
dc.contributor.googleauthor | Jang, Woochool | - |
dc.contributor.googleauthor | Seo, Hyungtak | - |
dc.contributor.googleauthor | Jeon, Hyeongtag | - |
dc.relation.code | 2014039053 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DIVISION OF MATERIALS SCIENCE AND ENGINEERING | - |
dc.identifier.pid | hjeon | - |
dc.identifier.researcherID | P-3193-2015 | - |
dc.identifier.orcid | http://orcid.org/0000-0003-2502-7413 | - |
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