| 2023 | Impact of controlling bias on EUV mask performance enhancement | 조민선 |
| 2016-02 | Investigation on electron bounce resonance heating at various chamber heights in a low pressure inductively coupled plasma | 구슬이 |
| 2021 | Low-damage growth of Silicon Oxide by Remote Plasma Atomic Layer Deposition using CO2 Plasma | 송재원 |
| 2010-02 | Metal nanocrystal 특성에 따른 저분자 유기 비휘발성 메모리 특성 연구 | 이상이 |
| 2013-02 | Microstructural engineering of metal oxide thin films deposited by remote plasma atomic layer deposition | 이재상 |
| 2020-02 | Modified floating harmonic method by analyzing harmonic currents of a DC blocking capacitor | 서종인 |
| 2016-08 | Multi-functional resistive switching behaviors based on titanium and tantalum oxide materials for nonvolatile memory applications | 이아람 |
| 2021 | Multi-stack absorber binary intensity mask using nickel for high numerical aperture extreme ultraviolet lithography | 한윤종 |
| 2019-02 | Noninvasive electrical plasma measurement method using inner substrates of a plasma reactor | Park, Ji Hwan |
| 2016-02 | Operating mechanisms of multilevel memory devices with a floating gate consisting of nanocomposites | 김유나 |
| 2022 | Optical properties of EUV mask for enhanced imaging performance | 김득규 |
| 2011-02 | PEALD를 이용한 다층 무기 박막의 보호막 특성 연구 | 권태석 |
| 2024 | Performance Enhancement of BaTiO3 Piezoelectric Nanogenerators using magnetic-alignment | 허원준 |
| 2018-08 | Pixel and Power Management Circuits for High Image Quality and Low Power OLED-on-Silicon Microdisplays | Bong-Choon Kwak |
| 2024 | Plasma Enhanced Atomic Layer Deposition of TiO2 using TDMAT and O2 plasma | 윤희준 |
| 2022 | Reducing Refresh Overhead with In-DRAM Error Correction Codes | 권한별 |
| 2010-02 | Refilled mask structure for minimizing shadowing effect on EUV Lithography | 신현덕 |
| 2022 | Remote plasma atomic layer deposition of SiNx gate spacer using BDEAS and N2 plasma | 박태훈 |
| 2023 | Research on Molecular Layer Deposition with Aromatic ligand : Graphitic carbon and Area Selective Deposition | 백건호 |
| 2015-02 | Resistive switching characteristics between binary oxide and metal (metal nitride) for nonvolatile memory application | 정재복 |
