2019-02 | D-클래스 증폭회로를 이용한 오디오 대역 저전력 DAC | 조은우 |
2019 | DDR3, LPDDR3를 위한 dual mode PHY interface | 전준열 |
2020-02 | Deposition of the molybdenum oxide thin films by ALD | 최연식 |
2017-02 | DEPOSITION OF VANADIUM DIOXIDE THIN FILM BY USING THERMAL ATOMIC LAYER DEPOSITION WITH WATER REACTANT | 신창희 |
2018-08 | Design of blue-sensitive organic photodiode in terms of bottom light absorption | 백효원 |
2013-02 | Design of CMP Slurry of Polycrystalline Ge2Sb2Te5 Film for Phase Change Memory Device | 조종영 |
2018-02 | Design of Low Molecular Organic Photodiode: Top Light Absorption and Bottom Light Absorption | 김재곤 |
2020-02 | Design of Perpendicular Magnetic Anisotropy of Co/Pt and Co/Ni Superlattice Structure Ferro-coupled to Co2Fe6B2 Free Layer with High Thermal Stability | 정선화 |
2016-08 | Detection of Breast cancer cell (BCC) by In-Ga-Zn-O thin film transistor integrated with metal dot arrays | 권세준 |
2015-08 | Developing thermally stable perpendicular MgO/CoFeB/W/CoFeB/MgO recording frame via W insertion layer | 김재홍 |
2022 | Development and application of SnS2 transistors | 이건우 |
2017-08 | Development of Magnetic Tunnel Junction-based Neuromorphic System for Spiking Neural Networks | 서동익 |
2022 | Dry development of silsesquioxane-based photoresists using CF3I | 신상휴 |
2021 | Effect of Absorber Composition on Ultra-violet Light Block Enhancement in Sunscreen via Quantum-Dot Ultra-violet CMOS Image Sensor | 정우윤 |
2018-08 | Effect of charged additive on SiO2 to poly-Si selectivity in wet ceria based CMP slurry | 윤석진 |
2019 | Effect of Diammonium Hydrogen Phosphate on Si3N4 and poly-Si selectivity in wet ceria based CMP Slurry | Nam, Hae Won |
2021 | Effect of Nano-Scale Hindrance-Layer of Amine-Functional Organic Polymer on Self-Stop Chemical Mechanical Planarization | 이제환 |
2023 | Effect of Wet-ceria synthesized by supercritical process on high topographic Polymer-film Chemical-Mechanical-Planarization | 홍성완 |
2021 | Effect on the mask imaging performance of the wrinkled EUV pellicle | 유병민 |
2020-08 | Electrical analysis of filamentary resistive switching behaviors based on tantalum oxide material for nonvolatile memory | 백광호 |