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dc.contributor.author전형탁-
dc.date.accessioned2018-03-27T00:08:25Z-
dc.date.available2018-03-27T00:08:25Z-
dc.date.issued2014-11-
dc.identifier.citationSURFACE & COATINGS TECHNOLOGY, 259, p.252-256en_US
dc.identifier.issn0257-8972-
dc.identifier.urihttp://www.sciencedirect.com/science/article/pii/S025789721400293X-
dc.identifier.urihttp://hdl.handle.net/20.500.11754/52774-
dc.description.abstractA Cu-V alloy is reported as a material for use in a self-forming barrier process. The diffusion barrier property of a V-based self-formed layer was investigated on various low-k dielectrics. Cu-V alloy films were directly deposited on various low-k dielectrics by co-sputtering, followed by annealing at various temperatures. X-ray diffraction revealed Cu (111), (200) and (220) peaks of the Cu-V alloys. Transmission electron microscopy showed that a uniform V-based interlayer self-formed at the interface after annealing. In order to evaluate the barrier property of the V-based interlayer, the thermal stability was measured with low-k dielectrics. The V-based interlayer formed on the low-k 3 dielectric that contained more oxygen had better thermal stability than that formed on the low-k 1 dielectric that contained less oxygen and more carbon. X-ray photoelectron spectroscopy analysis showed the chemical compositions of the self-formed layer. Furthermore, the results show that the formation of the V-based interlayers was strongly dominated by the oxygen concentration in the dielectric layers. (c) 2014 Elsevier B.V. All rights reserved.en_US
dc.description.sponsorshipThis work was performed with the support of Samsung Electronics Co. (grant number 2167) and helpful operators for the TEM analysis at the Industry-University Cooperation Foundation of Hanyang University.en_US
dc.language.isoenen_US
dc.publisherELSEVIER SCIENCE SA, PO BOX 564, 1001 LAUSANNE, SWITZERLANDen_US
dc.subjectCopper diffusion barrieren_US
dc.subjectSelf-forming barrieren_US
dc.subjectVanadiumen_US
dc.titleSelf-forming VOx layer as Cu diffusion barrier for low-k dielectricsen_US
dc.typeArticleen_US
dc.relation.volume259-
dc.identifier.doi10.1016/j.surfcoat.2014.04.003-
dc.relation.page252-256-
dc.relation.journalSURFACE & COATINGS TECHNOLOGY-
dc.contributor.googleauthorPark, Jae-Hyung-
dc.contributor.googleauthorHan, Dong-Suk-
dc.contributor.googleauthorKang, Yu-Jin-
dc.contributor.googleauthorShin, So-Ra-
dc.contributor.googleauthorJeon, Hyung-Tag-
dc.contributor.googleauthorPark, Jong-Wan-
dc.relation.code2014039936-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentDIVISION OF MATERIALS SCIENCE AND ENGINEERING-
dc.identifier.pidhjeon-
dc.identifier.researcherIDP-3193-2015-
dc.identifier.orcidhttp://orcid.org/0000-0003-2502-7413-
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COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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