Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 전형탁 | - |
dc.date.accessioned | 2018-03-27T00:08:25Z | - |
dc.date.available | 2018-03-27T00:08:25Z | - |
dc.date.issued | 2014-11 | - |
dc.identifier.citation | SURFACE & COATINGS TECHNOLOGY, 259, p.252-256 | en_US |
dc.identifier.issn | 0257-8972 | - |
dc.identifier.uri | http://www.sciencedirect.com/science/article/pii/S025789721400293X | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11754/52774 | - |
dc.description.abstract | A Cu-V alloy is reported as a material for use in a self-forming barrier process. The diffusion barrier property of a V-based self-formed layer was investigated on various low-k dielectrics. Cu-V alloy films were directly deposited on various low-k dielectrics by co-sputtering, followed by annealing at various temperatures. X-ray diffraction revealed Cu (111), (200) and (220) peaks of the Cu-V alloys. Transmission electron microscopy showed that a uniform V-based interlayer self-formed at the interface after annealing. In order to evaluate the barrier property of the V-based interlayer, the thermal stability was measured with low-k dielectrics. The V-based interlayer formed on the low-k 3 dielectric that contained more oxygen had better thermal stability than that formed on the low-k 1 dielectric that contained less oxygen and more carbon. X-ray photoelectron spectroscopy analysis showed the chemical compositions of the self-formed layer. Furthermore, the results show that the formation of the V-based interlayers was strongly dominated by the oxygen concentration in the dielectric layers. (c) 2014 Elsevier B.V. All rights reserved. | en_US |
dc.description.sponsorship | This work was performed with the support of Samsung Electronics Co. (grant number 2167) and helpful operators for the TEM analysis at the Industry-University Cooperation Foundation of Hanyang University. | en_US |
dc.language.iso | en | en_US |
dc.publisher | ELSEVIER SCIENCE SA, PO BOX 564, 1001 LAUSANNE, SWITZERLAND | en_US |
dc.subject | Copper diffusion barrier | en_US |
dc.subject | Self-forming barrier | en_US |
dc.subject | Vanadium | en_US |
dc.title | Self-forming VOx layer as Cu diffusion barrier for low-k dielectrics | en_US |
dc.type | Article | en_US |
dc.relation.volume | 259 | - |
dc.identifier.doi | 10.1016/j.surfcoat.2014.04.003 | - |
dc.relation.page | 252-256 | - |
dc.relation.journal | SURFACE & COATINGS TECHNOLOGY | - |
dc.contributor.googleauthor | Park, Jae-Hyung | - |
dc.contributor.googleauthor | Han, Dong-Suk | - |
dc.contributor.googleauthor | Kang, Yu-Jin | - |
dc.contributor.googleauthor | Shin, So-Ra | - |
dc.contributor.googleauthor | Jeon, Hyung-Tag | - |
dc.contributor.googleauthor | Park, Jong-Wan | - |
dc.relation.code | 2014039936 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DIVISION OF MATERIALS SCIENCE AND ENGINEERING | - |
dc.identifier.pid | hjeon | - |
dc.identifier.researcherID | P-3193-2015 | - |
dc.identifier.orcid | http://orcid.org/0000-0003-2502-7413 | - |
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