Self-forming VOx layer as Cu diffusion barrier for low-k dielectrics
- Title
- Self-forming VOx layer as Cu diffusion barrier for low-k dielectrics
- Author
- 전형탁
- Keywords
- Copper diffusion barrier; Self-forming barrier; Vanadium
- Issue Date
- 2014-11
- Publisher
- ELSEVIER SCIENCE SA, PO BOX 564, 1001 LAUSANNE, SWITZERLAND
- Citation
- SURFACE & COATINGS TECHNOLOGY, 259, p.252-256
- Abstract
- A Cu-V alloy is reported as a material for use in a self-forming barrier process. The diffusion barrier property of a V-based self-formed layer was investigated on various low-k dielectrics. Cu-V alloy films were directly deposited on various low-k dielectrics by co-sputtering, followed by annealing at various temperatures. X-ray diffraction revealed Cu (111), (200) and (220) peaks of the Cu-V alloys. Transmission electron microscopy showed that a uniform V-based interlayer self-formed at the interface after annealing. In order to evaluate the barrier property of the V-based interlayer, the thermal stability was measured with low-k dielectrics. The V-based interlayer formed on the low-k 3 dielectric that contained more oxygen had better thermal stability than that formed on the low-k 1 dielectric that contained less oxygen and more carbon. X-ray photoelectron spectroscopy analysis showed the chemical compositions of the self-formed layer. Furthermore, the results show that the formation of the V-based interlayers was strongly dominated by the oxygen concentration in the dielectric layers. (c) 2014 Elsevier B.V. All rights reserved.
- URI
- http://www.sciencedirect.com/science/article/pii/S025789721400293Xhttp://hdl.handle.net/20.500.11754/52774
- ISSN
- 0257-8972
- DOI
- 10.1016/j.surfcoat.2014.04.003
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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