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Electrical behavior of amorphous indium-gallium-zinc oxide thin film transistors by embedding Au nanoparticles in the channel layer

Title
Electrical behavior of amorphous indium-gallium-zinc oxide thin film transistors by embedding Au nanoparticles in the channel layer
Author
전형탁
Keywords
a-IGZO; TFTs; Au; Nanoparticles
Issue Date
2014-12
Publisher
ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
Citation
CURRENT APPLIED PHYSICS,권: 14,호: 12,페이지: 1767-1770
Abstract
We reported the effects on the electrical behavior of amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistors (TFTs) after introducing various positions and sizes of Au nanoparticles (NPs) in the channel layer. These TFTs showed an off-current increase and threshold voltage (Vth) shift compared to conventional a-IGZO TFTs. The effects of Au NPs are explained to form the carrier conduction path which causes the current leakage in the channel layer, and act as either electron injection sites or trap sites. Therefore, this study demonstrates that the optimized control of size and position of Au NPs in the channel layer is crucial for its application in the electrical stability improvement and Vth control of a-IGZO TFTs. (C) 2014 Elsevier B.V. All rights reserved.
URI
https://www.kci.go.kr/kciportal/ci/sereArticleSearch/ciSereArtiView.kci?sereArticleSearchBean.artiId=ART001938777http://hdl.handle.net/20.500.11754/52736
ISSN
1567-1739; 1878-1675
DOI
10.1016/j.cap.2014.09.027
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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