Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 박종완 | - |
dc.date.accessioned | 2018-03-26T05:26:02Z | - |
dc.date.available | 2018-03-26T05:26:02Z | - |
dc.date.issued | 2014-10 | - |
dc.identifier.citation | MATERIALS RESEARCH BULLETIN, 58권,특별호 SI, 174-177 | en_US |
dc.identifier.issn | 0025-5408 | - |
dc.identifier.uri | http://dx.doi.org/10.1016/j.materresbull.2014.05.009 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11754/52361 | - |
dc.description.abstract | This paper investigates the feasibility of a low-resistivity electrode material (Mo) for source/drain (S/D) electrodes in thin film transistors (TFTs). The effective resistances between Mo source/drain electrodes and amorphous zinc tin-oxide (a-ZTO) thin film transistors were studied. Intrinsic TFT parameters were calculated by the transmission line method (TLM) using a series of TFTs with different channel lengths measured at a low source/drain voltage. The TFTs fabricated with Mo source/drain electrodes showed good transfer characteristics with a field-effect mobility of 10.23 cm(2)/Vs. In spite of slight current crowding effects, the Mo source/drain electrodes showed good output characteristics with a steep rise in the low drain-to-source voltage (V-DS) region. (C) 2014 Elsevier Ltd. All rights reserved. | en_US |
dc.description.sponsorship | This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (NRF-2012R1A1B3001641). | en_US |
dc.language.iso | en | en_US |
dc.publisher | Elsevier Science B.V., Amsterdam. | en_US |
dc.subject | Amorphous materials | en_US |
dc.subject | Semiconductors | en_US |
dc.subject | Thin films | en_US |
dc.subject | Sputtering | en_US |
dc.subject | Electrical properties | en_US |
dc.title | Influence of molybdenum source/drain electrode contact resistance in amorphous zinc-tin-oxide (a-ZTO) thin film transistors | en_US |
dc.title.alternative | drain electrode contact resistance in amorphous zinc-tin-oxide (a-ZTO) thin film transistors | en_US |
dc.type | Article | en_US |
dc.relation.no | Special SI | - |
dc.relation.volume | 58 | - |
dc.identifier.doi | 10.1016/j.materresbull.2014.05.009 | - |
dc.relation.page | 174-177 | - |
dc.relation.journal | MATERIALS RESEARCH BULLETIN | - |
dc.contributor.googleauthor | Han, Dong-Suk | - |
dc.contributor.googleauthor | Kang, Yu-Jin | - |
dc.contributor.googleauthor | Park, Jae-Hyung | - |
dc.contributor.googleauthor | Jeon, Hyung-Tag | - |
dc.contributor.googleauthor | Park, Jong-Wan | - |
dc.relation.code | 2014035691 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DIVISION OF MATERIALS SCIENCE AND ENGINEERING | - |
dc.identifier.pid | jwpark | - |
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