Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 전형탁 | - |
dc.date.accessioned | 2018-03-26T05:21:09Z | - |
dc.date.available | 2018-03-26T05:21:09Z | - |
dc.date.issued | 2014-09 | - |
dc.identifier.citation | Physica Status Solidi. A, Vol.211 No.9 [2014], pp. 2166-2171 | en_US |
dc.identifier.issn | 1862-6300 | - |
dc.identifier.uri | http://onlinelibrary.wiley.com/doi/abs/10.1002/pssa.201431162 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11754/52349 | - |
dc.description.abstract | We investigated the characteristics of silicon nitride (SiN x ) thin films deposited by remote plasma atomic layer deposition (RPALD) using trisilyamine (TSA) and ammonia (NH 3 ) plasma at low temperatures. Although the process window of SiN x thin films is 150?350?°C, considering the refractive index (RI), SiN x thin films deposited at 250?350?°C were focused on for analyses. All of the SiN x films were nearly stoichiometric, regardless of the deposition temperature. As the deposition temperature increased, the RI increased, while the hydrogen content decreased. The defect density also changed at higher deposition temperatures; as the deposition temperature increased, all of the trap densities increased because of the low?hydrogen content in the SiN x thin films. The characteristics of the SiN x thin film deposited by RPALD could be controlled to adjust the defect density for charge trap flash memory applications by changing the deposition temperature. | en_US |
dc.description.sponsorship | This work was supported by a Nati onal Research Foundation of Korea (NRF) grant funded by the Korean government (MEST) (Grant No. 2012K1A3A1A26034855) and grants from Acad emy of Finland (Nos. 265080 and 251220 Fin nish Centr e of Excellence in ALD ). Special thanks to Hansol Chemical Co., Ltd for providin g TSA precu rsor. | en_US |
dc.language.iso | en | en_US |
dc.publisher | John Wiley & Sons, Ltd | en_US |
dc.subject | defect | en_US |
dc.subject | H content | en_US |
dc.subject | remote plasma atomic layer deposition | en_US |
dc.subject | silicon nitride thin film | en_US |
dc.title | Temperature dependence of silicon nitride deposited by remote plasma atomic layer deposition | en_US |
dc.type | Article | en_US |
dc.relation.no | 9 | - |
dc.relation.volume | 211 | - |
dc.identifier.doi | 10.1002/pssa.201431162 | - |
dc.relation.page | 2166-2171 | - |
dc.relation.journal | PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | - |
dc.contributor.googleauthor | Jang, Woochool | - |
dc.contributor.googleauthor | Jeon, Heeyoung | - |
dc.contributor.googleauthor | Kang, Chunho | - |
dc.contributor.googleauthor | Song, Hyoseok | - |
dc.contributor.googleauthor | Park, Jingyu | - |
dc.contributor.googleauthor | Kim, Hyunjung | - |
dc.contributor.googleauthor | Seo, Hyungtak | - |
dc.contributor.googleauthor | Leskela, Markku | - |
dc.contributor.googleauthor | Jeon, Hyeongtag | - |
dc.contributor.googleauthor | 전형탁 | - |
dc.relation.code | 2014037586 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DIVISION OF MATERIALS SCIENCE AND ENGINEERING | - |
dc.identifier.pid | hjeon | - |
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