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dc.contributor.author전형탁-
dc.date.accessioned2018-03-26T05:21:09Z-
dc.date.available2018-03-26T05:21:09Z-
dc.date.issued2014-09-
dc.identifier.citationPhysica Status Solidi. A, Vol.211 No.9 [2014], pp. 2166-2171en_US
dc.identifier.issn1862-6300-
dc.identifier.urihttp://onlinelibrary.wiley.com/doi/abs/10.1002/pssa.201431162-
dc.identifier.urihttp://hdl.handle.net/20.500.11754/52349-
dc.description.abstractWe investigated the characteristics of silicon nitride (SiN x ) thin films deposited by remote plasma atomic layer deposition (RPALD) using trisilyamine (TSA) and ammonia (NH 3 ) plasma at low temperatures. Although the process window of SiN x thin films is 150?350?°C, considering the refractive index (RI), SiN x thin films deposited at 250?350?°C were focused on for analyses. All of the SiN x films were nearly stoichiometric, regardless of the deposition temperature. As the deposition temperature increased, the RI increased, while the hydrogen content decreased. The defect density also changed at higher deposition temperatures; as the deposition temperature increased, all of the trap densities increased because of the low?hydrogen content in the SiN x thin films. The characteristics of the SiN x thin film deposited by RPALD could be controlled to adjust the defect density for charge trap flash memory applications by changing the deposition temperature.en_US
dc.description.sponsorshipThis work was supported by a Nati onal Research Foundation of Korea (NRF) grant funded by the Korean government (MEST) (Grant No. 2012K1A3A1A26034855) and grants from Acad emy of Finland (Nos. 265080 and 251220 Fin nish Centr e of Excellence in ALD ). Special thanks to Hansol Chemical Co., Ltd for providin g TSA precu rsor.en_US
dc.language.isoenen_US
dc.publisherJohn Wiley & Sons, Ltden_US
dc.subjectdefecten_US
dc.subjectH contenten_US
dc.subjectremote plasma atomic layer depositionen_US
dc.subjectsilicon nitride thin filmen_US
dc.titleTemperature dependence of silicon nitride deposited by remote plasma atomic layer depositionen_US
dc.typeArticleen_US
dc.relation.no9-
dc.relation.volume211-
dc.identifier.doi10.1002/pssa.201431162-
dc.relation.page2166-2171-
dc.relation.journalPHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE-
dc.contributor.googleauthorJang, Woochool-
dc.contributor.googleauthorJeon, Heeyoung-
dc.contributor.googleauthorKang, Chunho-
dc.contributor.googleauthorSong, Hyoseok-
dc.contributor.googleauthorPark, Jingyu-
dc.contributor.googleauthorKim, Hyunjung-
dc.contributor.googleauthorSeo, Hyungtak-
dc.contributor.googleauthorLeskela, Markku-
dc.contributor.googleauthorJeon, Hyeongtag-
dc.contributor.googleauthor전형탁-
dc.relation.code2014037586-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentDIVISION OF MATERIALS SCIENCE AND ENGINEERING-
dc.identifier.pidhjeon-
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COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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