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Issue DateTitleAuthor(s)
2015-04Patterning dependence on the mask defect for extreme ultraviolet lithography오혜근
2007-02Characteristics and prevention of pattern collapse in EUV lithography오혜근
2002-12Process Study of a 200 nm Laser Pattern Generator오혜근
1999-12Characteristics of 193 nm chemically amplified resist during post exposure bake and post exposure delay오혜근
1999-12Characteristics of 193 nm chemically amplified resist during post exposure bake and post exposure delayCharacteristics of 193 nm chemically amplified resist during post exposure bake and post exposure delayCharacteristics of 193 nm chemically amplified resist during post exposure bake and post exposure delay오혜근
2003-02Prediction of the Critical Dimensions by Using a Threshold Energy Resist Model오혜근
2004-06The Extraction of Develop Parameters by Using Cross-Sectional Critical Shape Error Method오혜근
2003-11Simulation Parameter Extraction Using Distribution Processing and Fast SEM Profile Digitization오혜근
2002-11Resolution Enhancement Method Using an Apodized Mask오혜근
2002-04Modification of the Development Parameter for a Chemically Amplified Resist SimulatorModification of the Development Parameter for a Chemically Amplified Resist SimulatorModification of the Development Parameter for a Chemically Amplified Resist SimulatorModification of the Development Parameter for a Chemically Amplified Resist SimulatorModification of the Development Parameter for a Chemically Amplified Resist SimulatorModification of the development parameter for a chemically amplified resist simulator오혜근
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