Results 1-6 of 6 (Search time: 0.002 seconds).
|2006-02||EUV lithography simulation for the 32 nm node||오혜근|
|2005-04||Reduction of the Absorber Shadow Effect by Changing the Absorber Side Wall Angle in Extreme Ultraviolet Lithography||오혜근|
|2004-05||Aerial image characterization for the defects in the extreme ultraviolet mask||오혜근|
|2004-06||Effect of Extreme Ultraviolet Light Scattering from the Rough Absorber and Buffer Side Wall||오혜근|
|2018-06||Removal of EUV exposed hydrocarbon from Ru capping layer of EUV mask using the mixture of alkaline solutions and organic solvents||오혜근|
|2017-06||Influence of a non-ideal sidewall angle of extreme ultra-violet mask absorber for 1×-nm patterning in isomorphic and anamorphic lithography||오혜근|