| 2004-09 | Anisotropic dielectric properties in epitaxial Bi3.25La0.75Ti3O12 thin films along different crystal directions | 강보수 |
| 2004-11 | Charge retention loss and its mechanism of (Bi,La)4Ti3O12 capacitors | 강보수 |
| 2008-01 | Comparative structural and electrical analysis of NiO and Ti doped NiO as materials for resistance random access memory | 강보수 |
| 2004-08 | Comparison of retention characteristics of Pb(Zr,Ti)O3(PZT) capacitors fabricated with noble metal electrodes and their oxide electrodes | 강보수 |
| 2005-01 | Controlling the nanostructure of RuO2/carbon nanotubes composites by using gas-annealing | 강보수 |
| 2012-01 | Conversion from unipolar to bipolar resistance switching by inserting Ta2O5 layer in Pt/TaOx/Pt cells (vol 98, 183507, 2011) | 강보수 |
| 2007-10 | Data retention characteristics of Bi3.25La0.75Ti3O12 thin films on conductive SrRuO3 electrodes | 강보수 |
| 2008-06 | Defect-induced degradation of rectification properties of aged Pt/n-InxZn1-xOy Schottky diodes | 강보수 |
| 2006-02 | Dielectric properties of <001>-oriented Ba0.6Sr0.4TiO3 thin films on polycrystalline metal tapes using biaxially oriented MgO/γ-Al2O3 buffer layers | 강보수 |
| 2004-03 | Dielectric properties of epitaxial Ba0.6Sr0.4TiO3 films on SiO2/Si using bi-axially oriented ion-beam-assisted deposited MgO as templates | 강보수 |
| 2002-11 | Dynamical aspects of retention and its relation to fatigue in ferroelectric thin films | 강보수 |
| 2021-04 | Effect of annealing temperature on switching properties in Si-doped HfO2 films | 강보수 |
| 2006-12 | Effect of conductive LaNiO3 electrode on the structural and ferroelectric properties of Bi3.25La0.75Ti3O12 films | 강보수 |
| 2020-05 | Effect of wake-up on the polarization switching dynamics of Si doped HfO2 thin films with imprint | 강보수 |
| 2007-06 | Effective thickness and dielectric constant of interfacial layers of Pt∕Bi 3.15 Nd 0.85 Ti 3 O 12 ∕SrRuO 3 capacitors | 강보수 |
| 2008-08 | Effects of metal electrodes on the resistive memory switching property of NiO thin films | 강보수 |
| 2015-06 | Effects of NH3 flow rate on the epitaxial growth of CoSi2 thin film using a CoN (x) interlayer deposited by MOCVD | 강보수 |
| 2019-04 | Effects of Pb content and electrode materials on the ferroelectric properties of Pb(Zr0.52Ti0.48)O-3 thin films | 강보수 |
| 2019-04 | Effects of repetitive polarization switching on the coercive voltage of Pt/Pb(Zr0.52Ti0.48 )O-3/Pt thin films analyzed using impedance spectroscopy | 강보수 |
| 2015-03 | Effects of the fluctuation in a singly-connected conducting filament structure on the distribution of the reset parameters in unipolar resistance switching | 강보수 |
| 2009-03 | Electrical manipulation of nanofilaments in transition-metal oxides for resistance-based memory | 강보수 |
| 2007-08 | Electromigration effect of Ni electrodes on the resistive switching characteristics of NiO thin films | 강보수 |
| 2005-02 | Ferromagnetic properties of epitaxial SrRuO3 films on SiO2/Si using biaxially oriented MgO as templates | 강보수 |
| 2013-09 | Forming process of unipolar resistance switching in Ta2O5-x thin films | 강보수 |
| 2008-08 | High-current-density CuOx/InZnOx thin-film diode for cross-point memory applications | 강보수 |
| 2020-04 | Highly stable, solution-processed quaternary oxide thin film-based resistive switching random access memory devices via global and local stoichiometric manipulation strategy | 강보수 |
| 2002-09 | Hydrogen-induced degradation in ferroelectric Bi3.25La0.75Ti3O12 | 강보수 |
| 2002-11 | Hydrogen-induced degradation mechanisms in ferroelectric (Bi,La)4Ti3O12 and Pb(Zr,Ti)O3 thin films | 강보수 |
| 2008-05 | Interpretation of nanoscale conducting paths and their control in nickel oxide (NiO) thin films | 강보수 |
| 2020-03 | J/psi and psi(2S) production at forward rapidity in p plus p collisions at root s=510 GeV | 강보수 |
