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COLLEGE OF ENGINEERING SCIENCES[E](공학대학)
ELECTRICAL ENGINEERING(전자공학부)
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Results 1-10 of 13 (Search time: 0.001 seconds).
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Author(s)
2005-04
Deep level defects in Si-doped AlXGa1-XN films grown by molecular-beam epitaxy
오재응
2005-08
Structural and optical properties of GaN/AlGaN multiquantum wells with an AlGaN insertion monolayer in the GaN well
오재응
2005-03
Thickness effects of Al0.5Ga0.5N barriers on the optical properties of δ-AlGaN-inserted GaN-coupled multiquantum wells
오재응
2005-09
Self-assembled GaN nano-rods grown directly on (111) Si substrates: Dependence on growth conditions
오재응
2005-08
Transport experiments on InAs self-assembled quantum dots in the microwave regime
오재응
2005-09
Indium-related novel architecture of GaN nanorod grown by molecular beam epitaxy
오재응
2005-04
Pulsed current-voltage-temperature characteristics of AlGaN/GaN high electron mobility transistor under isothermal conditions
오재응
2005-04
Thickness effects of Al0.5Ga0.5N barriers on the optical properties of delta-AlGaN-inserted GaN-coupled multiquantum wells
오재응
2005-04
Deep-level defects in AlGaN/GaN heterostructures grown using rf-plasma-assisted molecular beam epitaxy
오재응
2005-11
Deep level related to a two-dimensional electron gas region in Al xGa 1-xN/GaN heterointerfaces
오재응
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AlGaN/GaN
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aluminum compounds
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capacitance-voltage characteristics
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current collapse
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deep level transient spectroscopy
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deep-levels
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defect states
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