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COLLEGE OF ENGINEERING SCIENCES[E](공학대학)
ELECTRICAL ENGINEERING(전자공학부)
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Results 1-6 of 6 (Search time: 0.001 seconds).
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2015-06
중이온에 의한 SDRAM 컴포넌트의 리텐션 시간 측정 연구
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2015-08
Supply Voltage Dependence of Heavy Ion Induced SEEs on 65 nm CMOS Bulk SRAMs
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2015-02
Active-precharge hammering on a row induced failure in DDR3 SDRAMs under 3× nm technology
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2015-04
Stuck Bits Study in DDR3 SDRAMs Using 45-MeV Proton Beam
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2015-04
An SEU-Tolerant DICE Latch Design With Feedback Transistors
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2015-04
Logic soft error study with 800-MHz DDR3 SDRAMs in 3x nm using proton and neutron beams
백상현
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DDR3 SDRAM
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single event upset
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10T SUBTHRESHOLD SRAM
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3× nm technology
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Active-precharge hammering on a r...
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CELL
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Charge sharing
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DDR3
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DESIGN
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displacement damage effect
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