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|2016-03||Electrical and physicochemical properties of atomic-layer-deposited HfO2 film on Si substrate with interfacial layer grown by nitric acid oxidation||박태주|
|2015-12||Efficacy of In2S3 interfacial recombination barrier layer in PbS quantum-dot-sensitized solar cells||박태주|
|2016-08||Eliminated Phototoxicity of TiO2 Particles by an Atomic-Layer-Deposited Al2O3 Coating Layer for UV-Protection Applications||박태주|
|2016-08||Ultrathin ZnS and ZnO Interfacial Passivation Layers for Atomic-Layer-Deposited HfO2 Films on InP Substrates||박태주|