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COLLEGE OF ENGINEERING[S](공과대학)
MATERIALS SCIENCE AND ENGINEERING(신소재공학부)
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Results 1-4 of 4 (Search time: 0.002 seconds).
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2012-12
The properties of Ru films deposited by remote plasma atomic layer deposition on Ar plasma-treated SiO2
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2014-09
Temperature dependence of silicon nitride deposited by remote plasma atomic layer deposition
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2015-03
Growth behavior and structural characteristics of TiO2 thin films using (CpN)Ti(NMe2)(2) and oxygen remote plasma
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2015-12
The effect of plasma power on the properties of low-temperature silicon nitride deposited by RPALD for a gate spacer
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anatase
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defect
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DRAM capacitor
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NH3 plasma
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precursor
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ruthenium films
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