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dc.contributor.author강영종-
dc.date.accessioned2018-03-23T08:34:03Z-
dc.date.available2018-03-23T08:34:03Z-
dc.date.issued2014-04-
dc.identifier.citationRSC Advances , Vol.4 No.1 [2014] , 293-300en_US
dc.identifier.issn2046-2069-
dc.identifier.urihttp://pubs.rsc.org/en/Content/ArticleLanding/2014/RA/C3RA43890B#!divAbstract-
dc.identifier.urihttp://hdl.handle.net/20.500.11754/51624-
dc.description.abstractPoly(N-(4-hydroxyphenyl)maleimide-co-4-vinylphenol) (PHPMIVP) and its derivatives were developed for polymer gate dielectrics exhibiting high chemical resistance to various organic solvents and hysteresis-free operations in FET. PHPMIVP were modified with photo-reactive side-groups including cinnamoyl (PHPMIVP-C), methacroyl (PHPMIVP-M) or 4-(6-(7-coumarinyloxyl) hexyloxy)benzoyl (PHPMIVP-CHB). Especially, PHPMIVP-CHB exhibited high thermal stability and very strong chemical resistance to various organic solvents including acetone, THF, tetraline, chloroform and chlorobenzene, which allow forming dielectric layers and semiconducting layers by sequential spin-casting processes without deterioration of device performance. Neither breakdown-voltage shift nor change in the leakage current density curve was observed after treating PHPMIVP-CHB film with various organic solvents, photoresist stripper (PRS2000) or Au etchant (KI solution). The field-effect transistors fabricated by sequential spin-casting of PHPMIVP-CHB insulating layers and PQTBTz-C12 semiconducting layers showed charge mobility with mu(FET) - 0.029 cm(2) V-1 s(-1) and on/off ratio - 10(6) which are almost 10 times better than those of PQTBTz-C12 FETs fabricated on other polymers such as PHPMIVP, PHPMIVP-C and PHPMIVP-M.en_US
dc.description.sponsorshipThis work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (2011-0017197), NRF (2012M2A2A6035933) and by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (2012R1A6A1029029).en_US
dc.language.isoenen_US
dc.publisherROYAL SOC CHEMISTRY, THOMAS GRAHAM HOUSE, SCIENCE PARK, MILTON RD, CAMBRIDGE CB4 0WF, CAMBS, ENGLANDen_US
dc.subjectTHIN-FILM TRANSISTORSen_US
dc.subjectPERFORMANCEen_US
dc.subjectINSULATORen_US
dc.titlePhoto-crosslinkable polymer gate dielectrics for hysteresis-free organic field-effect transistors with high solvent resistanceen_US
dc.typeArticleen_US
dc.relation.no1-
dc.relation.volume4-
dc.identifier.doi10.1039/C3RA43890B-
dc.relation.page293-300-
dc.relation.journalRSC ADVANCES-
dc.contributor.googleauthorLee, E.-
dc.contributor.googleauthorKim, J.-
dc.contributor.googleauthorChung, J.-
dc.contributor.googleauthorLee, B. L.-
dc.contributor.googleauthorKang, Y.-
dc.relation.code2014039053-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF NATURAL SCIENCES[S]-
dc.sector.departmentDEPARTMENT OF CHEMISTRY-
dc.identifier.pidyoungjkang-
Appears in Collections:
COLLEGE OF NATURAL SCIENCES[S](자연과학대학) > CHEMISTRY(화학과) > Articles
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