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Enhancement of Initial Growth of ZnO Films on Layer-Structured Bi2Te3 by Atomic Layer Deposition

Title
Enhancement of Initial Growth of ZnO Films on Layer-Structured Bi2Te3 by Atomic Layer Deposition
Author
정두석
Issue Date
2014-11
Publisher
AMER CHEMICAL SOC, 1155 16TH ST, NW, WASHINGTON, DC 20036 USA
Citation
CHEMISTRY OF MATERIALS, 권: 26, 호: 22, 페이지: 6448-6453
Abstract
The initial growth behavior of ZnO films by atomic layer deposition (ALD) on layer-structured Bi2Te3 was investigated. Despite the lack of adsorption sites on the basal plane of Bi2Te3, negligible incubation in the ALD of ZnO on Bi2Te3 was found in the temperature range from 100 to 160 degrees C, and even the enhancement of the initial growth was observed at 200 degrees C. We demonstrate that a ZnTe interfacial layer was formed in the early growth stage by the interaction between diethylzinc and Bi2Te3, which improved the nucleation of ZnO on the basal plane of Bi2Te3. These results indicate that surface modification via the interaction between a precursor and layer-structured materials is an efficient way to achieve fluent and uniform nucleation on layer-structured materials such as Bi2Te3.
URI
https://pubs.acs.org/doi/abs/10.1021/cm502940vhttp://hdl.handle.net/20.500.11754/51579
ISSN
0897-4756; 1520-5002
DOI
10.1021/cm502940v
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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