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Influence of molybdenum source/drain electrode contact resistance in amorphous zinc-tin-oxide (a-ZTO) thin film transistors

Title
Influence of molybdenum source/drain electrode contact resistance in amorphous zinc-tin-oxide (a-ZTO) thin film transistors
Other Titles
drain electrode contact resistance in amorphous zinc-tin-oxide (a-ZTO) thin film transistors
Author
전형탁
Keywords
SERIES-RESISTANCE; ROOM-TEMPERATURE; SEMICONDUCTORS; THICKNESS
Issue Date
2014-10
Publisher
Elsevier Science B.V., Amsterdam.
Citation
Materials research bulletin , Vol.58 No.- [2014] , 174-177
Abstract
This paper investigates the feasibility of a low-resistivity electrode material (Mo) for source/drain (S/D) electrodes in thin film transistors (TFTs). The effective resistances between Mo source/drain electrodes and amorphous zinc tin-oxide (a-ZTO) thin film transistors were studied. Intrinsic TFT parameters were calculated by the transmission line method (TLM) using a series of TFTs with different channel lengths measured at a low source/drain voltage. The TFTs fabricated with Mo source/drain electrodes showed good transfer characteristics with a field-effect mobility of 10.23 cm(2)/Vs. In spite of slight current crowding effects, the Mo source/drain electrodes showed good output characteristics with a steep rise in the low drain-to-source voltage (V-DS) region. (C) 2014 Elsevier Ltd. All rights reserved.
URI
https://www.sciencedirect.com/science/article/pii/S0025540814002669?via%3Dihubhttp://hdl.handle.net/20.500.11754/51084
ISSN
0025-5408; 1873-4227
DOI
10.1016/j.materresbull.2014.05.009
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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