Three-dimensionally kinked high-conducting CoGe nanowire growth induced by rotational twinning
- Title
- Three-dimensionally kinked high-conducting CoGe nanowire growth induced by rotational twinning
- Author
- 주재범
- Keywords
- Chemical vapor transport; Efficient catalysts; Electrical measurement; High-k dielectric; Nano-electrodes; Nanoelectronic devices; On-chip interconnects; Single-crystalline
- Issue Date
- 2013-09
- Publisher
- Royal Society of Chemistry
- Citation
- Journal of Materials Chemistry C, 2013, 1(39), p.6259-6264
- Abstract
- We have synthesized single-crystalline horizontal and free-standing monoclinic CoGe nanowire (NW) arrays on high-k dielectric Y-stabilized ZrO2 (110) substrates via a chemical vapor transport process without using any catalysts. Horizontal NWs are grown epitaxially on the substrate. Three-dimensionally (3D)-kinked NWs are grown from the tip of the horizontal NWs homoepitaxially initiated by rotational twinning. Electrical measurements show that both horizontal and 3D-kinked CoGe NWs have low resistivity. The 3D-kinked NWs as well as free-standing metallic CoGe NWs integrated on Y-stabilized ZrO2 substrates could find applications as effective on-chip interconnects and nanoelectrodes for highly integrated nanoelectronic devices and as platforms for fuel cells and as efficient catalysts.
- URI
- http://pubs.rsc.org/en/Content/ArticleLanding/2013/TC/c3tc31214c#!divAbstract
- ISSN
- 2050-7526
- DOI
- 10.1039/c3tc31214c
- Appears in Collections:
- GRADUATE SCHOOL[S](대학원) > ETC
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