98 0

Electrical and physicochemical properties of atomic-layer-deposited HfO2 film on Si substrate with interfacial layer grown by nitric acid oxidation

Title
Electrical and physicochemical properties of atomic-layer-deposited HfO2 film on Si substrate with interfacial layer grown by nitric acid oxidation
Author
박태주
Keywords
ALD; Hf-silicate; MIS device; Nitric acid oxidation; SiO2; THIN-FILMS; THERMAL-OXIDATION; MOBILITY; STACK
Issue Date
2016-03
Publisher
ELSEVIER SCIENCE BV
Citation
APPLIED SURFACE SCIENCE, v. 365, Page. 376-379
Abstract
The ultrathin SiO2 interfacial layer (IL) was adopted at the interface between atomic-layer-deposited HfO2 gate dielectric film and a Si substrate, which was grown using nitric acid oxidation (NAO) and O-3 oxidation (OZO) prior to Hf-2 film deposition. X-ray photoelectron spectroscopy result revealed that Si diffusion from the substrate into the film was suppressed for the film with NAO compared to that with OZO, which was attributed to the higher physical density of IL. The electrical measurement using metal-insulator-semiconductor devices showed that the film with NAO exhibited higher effective permittivity and lower densities of fixed charge and slow state at the interface. Furthermore, the leakage current density at an equivalent electrical thickness was lower for the film with NAO than OZO. (C) 2016 Elsevier B.V. All rights reserved.
URI
https://www.sciencedirect.com/science/article/pii/S0169433216000684http://hdl.handle.net/20.500.11754/50746
ISSN
0169-4332; 1873-5584
DOI
10.1016/j.apsusc.2016.01.042
Appears in Collections:
COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > MATERIALS SCIENCE AND CHEMICAL ENGINEERING(재료화학공학과) > Articles
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE