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Current-driven switching property of MgO-based magnetic tunnel junctions with a CoFeB free layer with in-plane magnetization

Title
Current-driven switching property of MgO-based magnetic tunnel junctions with a CoFeB free layer with in-plane magnetization
Author
박완준
Keywords
Magnetic tunnel junction; Current-driven switching; Spin-transfer torque; MTJ switching; Switching stability; Thermal activation of magnetization switching
Issue Date
2012-12
Publisher
Korean Physical Society; 1999
Citation
Journal of the Korean Physical Society, 2012, 61(10), P.1596-1599
Abstract
Spin-transfer torque enables magnetization switching by passing a spin-polarized current through nanostructures of spin valves or magnetic tunnel junctions. In this study, current driven switching is investigated for the magnetic tunnel junctions of CoFeB free layer having in-plane magnetization. It is found that the critical switching current depends on the feature of switching modes as well as the junction geometries. Especially, the long pulse mode switching generates the equilibrium remnant magnetization states before complete magnetization reversal. It results a robust switching by reducing the local magnetization anomalies. The current driven switching is understood by the combined effect of spin transfer and thermal activation.
URI
https://link.springer.com/article/10.3938%2Fjkps.61.1596http://hdl.handle.net/20.500.11754/50423
ISSN
0374-4884; 3744-4884
DOI
10.3938/jkps.61.1596
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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