Improvement in the I-V characteristics of carbon nanotube network transistors using microwave treatment

Abstract

This work describes microwave irradiation effects on the transfer characteristics of single-walled carbon nanotube network transistors. The microwave treatment dramatically increases the on-off ratio of electrical currents by reducing the off-state current. Detailed analyses of the Raman spectroscopy, thermal effect, and direct image comparison suggest preferential removal of the metallic paths formed in the transistor channel. This treatment can be utilized as a curing method for electrically failed transistors, even after completion of device fabrication.