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Improvement in the I-V characteristics of carbon nanotube network transistors using microwave treatment

Title
Improvement in the I-V characteristics of carbon nanotube network transistors using microwave treatment
Author
박완준
Keywords
CNT; PECVD; Plasma treatment; CNTFET
Issue Date
2012-12
Publisher
한국물리학회
Citation
Journal of the Korean Physical Society, 2012, 61(10), P.1587-1591, 5P.
Abstract
This work describes microwave irradiation effects on the transfer characteristics of single-walled carbon nanotube network transistors. The microwave treatment dramatically increases the on-off ratio of electrical currents by reducing the off-state current. Detailed analyses of the Raman spectroscopy, thermal effect, and direct image comparison suggest preferential removal of the metallic paths formed in the transistor channel. This treatment can be utilized as a curing method for electrically failed transistors, even after completion of device fabrication.
URI
https://link.springer.com/article/10.3938%2Fjkps.61.1587http://hdl.handle.net/20.500.11754/50413
ISSN
0374-4884; 3744-4884
DOI
10.3938/jkps.61.1587
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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