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dc.contributor.author신동수-
dc.date.accessioned2018-03-22T04:18:49Z-
dc.date.available2018-03-22T04:18:49Z-
dc.date.issued2014-03-
dc.identifier.citationPROCEEDINGS - SPIE THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING, Vol.8986 No.- [2014], pp. 8986 1Sen_US
dc.identifier.isbn978-081949899-1-
dc.identifier.issn0277-786X-
dc.identifier.urihttp://www.spiedigitallibrary.org/conference-proceedings-of-spie/8986/1/Low-temperature-studies-of-the-efficiency-droop-in-InGaN-based/10.1117/12.2037986.full?SSO=1-
dc.identifier.urihttp://hdl.handle.net/20.500.11754/50379-
dc.description.abstractThe efficiency droop in light-emitting diodes (LEDs) represents a gradual decrease of the internal quantum efficiency (IQE) with increasing current. Experimentally, the IQE droops are strong functions of material, epitaxial and chip structures, and operating temperature. Recently, we have proposed an IQE droop model as the saturation of the radiative recombination rate at low current and subsequent increase in the nonradiative recombination rates at high current. Once the radiative recombination rate begins to saturate at an active region, the carrier density as well as the nonradiative recombination rate rapidly increase there. Eventually, the IQE droop appears from the increase in the nonradiative recombination rate being much larger than that in the radiative one. A dominant nonradiative recombination process is not solely determined for each LED chip, but it could vary with current level and operating temperature. As temperature decreases, in general, the IQE droop becomes larger with the peak IQE occurring at an extremely small current level. We test the droop model by investigating the radiative and nonradiative recombination processes separately from the cryogenic to room temperature. The characterization methods include comparative efficiency study between photoluminescence (PL) and electroluminescence (EL), open-circuit voltage under resonant PL excitation, interrelations of current-voltage-light characteristics, and EL spectra of color-coded quantum wells (QWs). Although a sudden increase of the nonradiative recombination rate is an apparent cause of the IQE droop, the saturation of the radiative recombination rate is the common trigger behind the IQE droop issue.ⓒ (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.en_US
dc.description.sponsorshipThis work was supported by the Industrial Strategic Technology Development Program (10041878), “Development of WPE 75% LED device process and standard evaluation technology”, funded by the Ministry of Knowledge Economy (MKE), Republic of Korea.en_US
dc.language.isoenen_US
dc.publisherInternational Society for Optical Engineering; 1999en_US
dc.subjectefficiency droopen_US
dc.subjectelectroluminescenceen_US
dc.subjectinternal quantum efficiencyen_US
dc.subjectlow temperatureen_US
dc.subjectnonradiative recombinationen_US
dc.subjectopen-circuit voltageen_US
dc.subjectphotoluminescenceen_US
dc.subjectsaturation of radiative recombination rateen_US
dc.titleLow temperature studies of the efficiency droop in InGaN-based light-emitting diodesen_US
dc.typeArticleen_US
dc.relation.volume8986-
dc.identifier.doi10.1117/12.2037986-
dc.relation.page898611-898618-
dc.relation.journalProceedings of SPIE - The International Society for Optical Engineering-
dc.contributor.googleauthorShim, J.-I.-
dc.contributor.googleauthorKim, H.-
dc.contributor.googleauthorHan, D.-P.-
dc.contributor.googleauthorShin, D.-S.-
dc.contributor.googleauthorKim, K.S.-
dc.contributor.googleauthor신동수-
dc.relation.code2014019343-
dc.sector.campusS-
dc.sector.daehakGRADUATE SCHOOL[S]-
dc.sector.departmentDEPARTMENT OF BIONANOTECHNOLOGY-
dc.identifier.piddshin-
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GRADUATE SCHOOL[S](대학원) > BIONANOTECHNOLOGY(바이오나노학과) > Articles
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